Transistors
2SD2179
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB1446
0.7
Unit: mm
6.9
±0.1
4.0
2.5
±0.1
(0.8)
(1.0)
(0.2)
4.5
±0.1
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Allowing supply with the radial taping
0.65 max.
(1.0)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
50
50
5
5
7
1
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
1
2
3
0.45
+0.10
–0.05
2.5
±0.5
2.5
±0.5
14.5
±0.5
1.05
±0.05
0.45
+0.10
–0.05
1 : Emitter
2 : Collector
3 : Base
MT-2-A1 Package
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
*2
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
= 2 V, I
C
= 500 mA
V
CE
= 2 V, I
C
= 2.5 A
I
C
=
2 A, I
B
=
100 mA
I
C
=
2 A, I
B
=
100 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
50
50
5
Typ
Max
(0.5)
Unit
V
V
V
µA
V
V
MHz
pF
0.1
120
60
0.19
0.85
80
60
70
0.30
1.20
340
h
FE2 *1
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
R
120 to 240
S
170 to 340
Publication date: January 2003
SJC00244BED
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