Ordering number:ENN5185
NPN Epitaxial Planar Silicon Transistor
2SC5275
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain :
⏐S21e⏐
2
=10dB typ (f=1.5GHz).
· High cutoff frequency : f
T
=11GHz typ.
· Low-voltage, low-current operation
(V
CE
=1V, I
C
=1mA)
: f
T
=7GHz type.
:
⏐S21e⏐
2
=5.5dB typ (f=1.5GHz).
Package Dimensions
unit:mm
2018B
[2SC5275]
0.5
0.4
3
0.16
0 to 0.1
1
0.95 0.95
2
1.9
2.9
0.5
1.5
2.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.8
1.1
Ratings
20
10
1.5
30
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=1V, IC=1mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
60*
8
11
7
0.45
0.30
0.7
Conditions
Ratings
min
typ
max
1.0
10
270*
GHz
GHz
pF
pF
Unit
µA
µA
* : The 2SC5275 is classified by 10mA h
FE
as follows :
Marking : MN
Rank
h
FE
rank : 3, 4, 5
hFE
Continued on next page.
3
60 to 120
4
90 to 180
5
135 to 270
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30105TN (PC)/21599TH (KT)/83095YK (KOTO) TA-0414 No.5185–1/5
2SC5275
Continued from preceding page.
Parameter
Forward Transfer Gain
Noise Figure
Symbol
| S21e |
2
1
| S21e
|
2
2
NF1
NF2
Conditions
VCE=5V, IC=10mA, f=1.5GHz
VCE=1V, IC=1mA, f=1.5GHz
VCE=5V, IC=5mA, f=1.5GHz
VCE=2V, IC=3mA, f=1GHz
Ratings
min
8
typ
10
5.5
1.4
0.9
3.0
max
Unit
dB
dB
dB
dB
5
3
2
hFE -- IC
VCE=5V
3
fT -- IC
f=1GHz
Gain-Bandwidth Product, fT – GHz
2
DC Current Gain, hFE
10
7
5
3
2
100
7
5
3
2
=5V
V CE
1V
10
7
5
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
7 100
ITR08019
5
1.0
7
5
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC – mA
5
3
Collector Current, IC – mA
ITR08020
Cob -- VCB
Reverse Transfer Capacitance, Cre – pF
f=1MHz
5
3
2
Cre -- VCB
f=1MHz
Output Capacitance, Cob – pF
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0.1
7
5
7 0.1
2
3
5 7 1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB – V
16
⏐S21e⏐
2
-- IC
ITR08021
16
Collector-to-Base Voltage, VCB – V
⏐S21e⏐
2
-- IC
ITR08022
f=1.5GHz
f=1GHz
Forward Transfer Gain,
⏐S21e⏐
2
– dB
14
12
Forward Transfer Gain,
⏐S21e⏐
2
– dB
14
=5V
VCE
2V
12
10
V
=5
V CE
2V
10
8
6
4
2
0
1V
8
6
4
2
0
1V
3
5
7 1.0
2
3
5
7
10
2
3
Collector Current, IC – mA
7 100
ITR08023
5
3
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
7 100
ITR08024
No.5185–2/5
2SC5275
12
NF -- IC
f=1.5GHz
12
NF -- IC
VCE=2V
f=1GHz
10
10
Noise Figure, NF – dB
Noise Figure, NF – dB
8
8
6
6
VC
E=1V
5V
4
4
2
2
0
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0
1.0
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC – mA
240
ITR08025
Collector Current, IC – mA
ITR08026
PC -- Ta
Collector Dissipation, PC – mW
200
160
120
80
40
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta –
°C
ITR08027
S Parameters
S11e
f=200MHz to 2000MHz(200MHz Step)
j50
j25
j100
j150
j10
V
=5 A
E
V C 10m
=
2.0GHz
I C
2.0GHz
2.0GHz
z
2.0GH
25
50
S21e
f=200MHz to 2000MHz(200MHz Step)
90
°
120
°
VC =
E 5
IC =10 V
mA
2.0
60
°
j200
j250
150
°
0.2GHz
0.2
G
V
Hz
CE
IC
=1 =1V
mA
0.2GH
z
--j10
V
IC CE =1
=1 V
mA
V
=5
E mA
V C =5
Hz
I C
.2G
0
0.2
G
0.2
Hz
GH
z
0.2
G
--j250
--j200
--j150
Hz
0
10
100 150 250
±180°
V CE=5V
I C=5mA
0.2GHz
=2V
VCE mA
3
I C=
30
°
z
z
.0GHHz
GH
22.0G z
GH
2.0
4
8
12
16 20
0
--150
°
--30
°
--j25
--j50
VCE=2V
IC=3mA
--j100
--120
°
ITR08028
--60
°
--90
°
ITR08029
No.5185–3/5
2SC5275
S12e
f=200MHz to 2000MHz(200MHz Step)
90
°
120
°
S22e
f=200MHz to 2000MHz(200MHz Step)
j50
V
IC CE =5
=5 V
2.0
mA
GH
2.0
z
GH
z
2.0
GH
z
60
°
V
IC CE =5
=1 V
0m
A
2.0
GH
j25
j100
j150
150
°
0
0
0.2
.2G
.2G
GH
H
H
0.2
z
z
z
GH
z
±180°
0.04 0.08 0.12 0.16 0.2
0
0
10
25
50
100 150
--j10
--150
°
--30
°
--120
°
--90
°
--60
°
ITR08030
--j25
5V
V CE= A
0m
I C=1
2.0GHz
--j250
z
2.0GH
.0GHz
--j200
2
=1V
z
VCE mA
--j150
2.0GH
1
VCE=2V
I C=
--j100
IC=3mA
--j50
S parameters
(Common emitter)
V
CE
=5V, I
C
=5mA, Z
O
=50Ω
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
| S11 |
0.725
0.540
0.400
0.320
0.263
0.221
0.199
0.180
0.169
0.168
∠
S11
–37.6
–64.0
–83.2
–98.5
–112.1
–127.8
–140.4
–154.5
–169.9
176.2
| S21 |
11.573
8.744
6.691
5.357
4.503
3.874
3.409
2.984
2.710
2.486
∠
S21
144.6
122.0
107.0
96.6
88.5
81.2
74.6
68.5
63.0
58.2
| S12 |
0.035
0.058
0.074
0.089
0.104
0.119
0.135
0.150
0.167
0.183
∠
S12
71.3
63.0
60.6
60.8
61.0
60.7
60.7
60.7
59.9
59.4
| S22 |
0.885
0.731
0.628
0.562
0.527
0.503
0.487
0.473
0.463
0.462
∠
S22
–18.7
–27.7
–31.4
–33.3
–35.1
–37.5
–40.1
–43.3
–46.8
–50.4
V
CE
=5V, I
C
=10mA, Z
O
=50Ω
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
| S11 |
0.547
0.364
0.261
0.202
0.177
0.157
0.150
0.148
0.154
0.162
∠
S11
–51.4
–80.4
–99.7
–116.9
–132.9
–150.3
–164.6
–179.2
169.8
157.5
| S21 |
15.617
10.257
7.389
5.761
4.763
4.055
3.545
3.111
2.814
2.565
∠
S21
133.5
111.4
98.8
89.9
83.2
76.5
71.0
65.6
60.5
56.0
| S12 |
0.031
0.049
0.065
0.081
0.099
0.117
0.134
0.151
0.170
0.187
∠
S12
69.6
65.8
66.3
67.4
67.7
67.0
66.4
65.7
64.3
63.4
| S22 |
0.799
0.628
0.548
0.501
0.481
0.467
0.458
0.448
0.441
0.440
∠
S22
–22.7
–27.9
–28.7
–29.6
–31.1
–33.5
–36.3
–40.0
–43.9
–47.8
V
IC CE =
=5 5V
m
A
0.2GH
z
0.2GH
z
0.2G
0.2GHz
Hz
250
VCE=1V
V
IC=1mA
=2 A
E
V C =3m
IC
30
°
z
j10
j200
j250
ITR08031
No.5185–4/5
2SC5275
V
CE
=2V, I
C
=3mA, Z
O
=50Ω
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
| S11 |
0.814
0.664
0.526
0.430
0.364
0.310
0.274
0.247
0.237
0.233
∠
S11
–31.0
–56.7
–75.9
–92.7
–107.1
–121.7
–134.9
–148.7
–162.4
–174.5
| S21 |
8.333
6.925
5.576
4.639
3.950
3.449
3.048
2.706
2.446
2.250
∠
S21
151.1
129.6
113.7
101.8
92.7
84.3
76.9
70.1
64.0
58.7
| S12 |
0.044
0.074
0.094
0.109
0.124
0.138
0.152
0.165
0.180
0.193
∠
S12
72.9
61.9
56.2
54.1
53.1
52.3
52.2
52.1
52.0
52.0
| S22 |
0.924
0.793
0.683
0.598
0.547
0.510
0.485
0.464
0.450
0.444
∠
S22
–17.0
–28.4
–34.9
–39.1
–42.1
–44.9
–48.0
–51.6
–55.2
–58.8
V
CE
=1V, I
C
=1mA, Z
O
=50Ω
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
| S11 |
0.937
0.876
0.780
0.699
0.619
0.553
0.498
0.457
0.418
0.398
∠
S11
–19.9
–38.2
–56.2
–72.0
–87.4
–101.1
–114.4
–125.9
–139.7
–151.1
| S21 |
3.404
3.198
2.929
2.656
2.478
2.224
2.062
1.843
1.722
1.592
∠
S21
161.1
144.6
128.8
115.8
104.2
93.8
84.1
75.6
67.5
60.9
| S12 |
0.055
0.102
0.138
0.164
0.185
0.196
0.204
0.209
0.201
0.210
∠
S12
77.0
65.7
56.2
48.7
42.8
37.8
34.1
31.5
30.5
30.3
| S22 |
0.978
0.926
0.858
0.784
0.734
0.677
0.639
0.610
0.580
0.567
∠
S22
–11.1
–21.1
–29.5
–36.7
–42.1
–47.7
–52.5
–56.9
–61.4
–65.2
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject to
change without notice.
PS No.5185–5/5
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