Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1115K
DESCRIPTION
·With
TO-220 package
·DARLINGTON
APPLICATIONS
·For
high voltage switching
and ignitor applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
400
300
7
3
6
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CBO
V
EBO
V
CEsat
V
BEsat
I
CEO
h
FE
PARAMETER
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
CONDITIONS
I
C
=2A ; PW=50μs
f=50Hz, L=10mH
I
C
=0.1A ,I
E
=0
I
E
=50mA ;I
C
=0
I
C
=2A; I
B
=20mA
I
C
=2A; I
B
=20mA
V
CE
=300V; R
BE
=∞
I
C
=2A ; V
CE
=2V
500
MIN
300
400
7
2SD1115K
TYP.
MAX
UNIT
V
V
V
1.5
2.0
0.1
V
V
mA
Switching times
t
on
t
off
Turn-on time
I
C
=2A;I
B1
=- I
B2
=20mA
Turn-off time
22
μs
1.0
μs
2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
