Transistor
2SC3311A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SA1309A
4.0±0.2
Unit: mm
s
Features
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
2.0±0.2
Ratings
60
50
7
200
100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54±0.15
EIAJ:SC–72
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
7
160
0.1
150
3.5
460
0.3
V
MHz
pF
min
typ
max
0.1
1
Unit
µA
µA
V
V
V
*
h
FE
Rank classification
Q
160 ~ 260
R
210 ~ 340
S
290 ~ 460
h
FE
Rank
0.7±0.1
marking
+0.2
0.45–0.1
15.6±0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
3.0±0.2
1
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