Power Transistors
2SD2178
Silicon NPN epitaxial planar type
For low-frequency output amplification
7.5
±0.2
Unit: mm
4.5
±0.2
16.0
±1.0
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
50
50
5
2
3
1.5
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
2.5
±0.1
•
Low collector-emitter saturation voltage V
CE(sat)
•
Large collector current I
C
10.8
±0.2
0.65
±0.1
0.85
±0.1
1.0
±0.1
0.8 C
90˚
■
Features
3.8
±0.2
0.8 C
0.7
±0.1
0.7
±0.1
1.15
±0.2
1.15
±0.2
0.5
±0.1
0.8 C
1
2
3
2.05
±0.2
0.4
±0.1
2.5
±0.2
2.5
±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
=
20 V, I
E
=
0
V
CE
=
2 V, I
C
=
200 mA
V
CE
=
2 V, I
C
=
1 A
I
C
=
1 A, I
B
=
50 mA
I
C
=
1 A, I
B
=
50 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
120
80
0.15
0.9
150
23
35
0.30
1.2
V
V
MHz
pF
Min
50
50
5
0.1
340
Typ
Max
Unit
V
V
V
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
R
120 to 240
S
170 to 340
Publication date: May 2003
SJD00251BED
1
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•
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•
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