2SK1822-01MR
N-CHANNEL SILICON POWER MOSFET
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Including G-S Zener diode
FUJI POWER MOSFET
FAP-IIIA SERIES
Outline Drawings
TO-220F15
Applications
Motor controllers
General purpose power amplifier
DC-DC converters
JEDEC
EIAJ
SC-67
3. Source
2.54
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
I
DR
V
GS
P
D
T
ch
T
stg
Rating
60
20
80
20
±20
35
+150
-55 to +150
Unit
V
A
A
A
V
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
(t
on
=t
d(on)
+t
r
)
Turn-off time t
off
(t
off
=t
d(off)
+t
f
)
Diode forward on-voltage
Reverse recovery time
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=60V V
GS
=0V
V
GS
=±16V V
DS
=0V
I
D
=10A V
GS
=4V
I
D
=10A V
GS
=10V
I
D
=10A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V R
G
=25
Ω
I
D
=20A
V
GS
=10V
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
di/dt=100A/µs T
ch
=25°C
Min.
60
1.0
T
ch
=25°C
T
ch
=125°C
Typ.
1.5
Max.
2.0
500
1.0
10
110
70
900
390
240
11
45
150
110
2.18
130
Units
V
V
µA
mA
µA
mΩ
S
pF
6.0
90
55
12.0
600
260
150
7
30
100
70
1.45
90
ns
V
ns
Thermal characteristics
Item
Thermal resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test Conditions
channel to ambient
channel to case
Min.
Typ.
Max.
62.5
3.57
Units
°C/W
°C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
40
150
30
2SK1822-01MR
On state resistance vs. T
ch
I
D
[ A ] 20
100
R
DS(on)
[ mΩ ]
50
10
0
0
5
10
V
DS
[ V ]
15
0
-50
0
50
T
ch
[ °C ]
100
150
Typical transfer characteristics
400
40
Typical Drain-Source on state resistance vs. I
D
30
300
R
DS(on)
I
D
20
[A]
[ mΩ ]
200
10
100
0
0
5
V
GS
10
[V]
15
0
0
10
20
I
D
[ A ]
30
40
50
Typical forward transconductance vs. I
D
15
3.0
Gate threshold voltage vs. T
ch
10
gfs
[S]
2.0
V
GS(th)
[V]
5
1.0
0
0
10
20
I
D
[ A ]
30
40
0
-50
0
50
T
ch
[ °C ]
100
150
2
FUJI POWER MOSFET
Typical capacitance vs. V
DS
10
5
40
50
2SK1822-01MR
Typical input charge
25
20
C
[nF]
1
0.5
V
DS
30
[V]
15
V
GS
[V]
10
20
0.1
0.05
10
5
0
0
10
V
DS
[ V ]
20
30
0
20
40
60
80
100
0
Qg [ nC ]
Forward characteristics of reverse diode
100
40
Allowable power dissipation vs. T
c
50
30
I
F
10
[A]
5
P
D
20
[W]
10
1
0
0.8
V
SD
[ V ]
1.6
2.4
0
0
50
T
c
[ °C ]
100
150
Safe operating area
100
50
Transient thermal impedance
10
0
R
th
[°C/W]
10
-1
10
I
D
[A] 5
1
0.5
10
-2
10
-5
10
-4
10
-3
10
-2
t [ sec. ]
10
-1
10
0
10
1
0.5
1
5
10
V
DS
[ V ]
50
100
3
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