INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1847
DESCRIPTION
·Collector-Base
Breakdown Voltage-
: V
CBO
= 1500V (Min.)
·High
Switching Speed
·Built-in
Damper Diode
APPLICATIONS
·Designed
for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector- Base Voltage
V
CES
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
I
CM
Collector Current-Continuous
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VALUE
UNIT
1500
V
1500
V
7
V
5
A
15
A
2
A
3
W
Collector Current-Peak
I
B
B
Base Current- Continuous
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
100
150
℃
℃
T
stg
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1847
TYP.
MAX
UNIT
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 500mA; I
C
= 0
7
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 1A
B
8.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 1A
B
1.5
10
1.0
5
25
V
μA
mA
I
CBO
Collector Cutoff Current
V
CB
= 750V; I
E
= 0
V
CB
= 1500V; I
E
= 0
I
C
= 1A; V
CE
= 5V
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
V
ECF
C-E Diode Forward Voltage
Switching times, Resistive Load
t
stg
t
f
Storage Time
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I
C
= 4A; V
CE
= 10V
4
I
C
= 1A; V
CE
= 10V
I
F
= 5A
I
C
= 4A; I
B1
= 1A; I
B2
= -2A;
V
CC
= 200V
2
MHz
2.3
V
1.5
μs
μs
Fall Time
0.2
isc Website：www.iscsemi.cn
2
stm32/stm8
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