Transistors
2SD1302
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Low ON resistance R
on
•
High forward current transfer ratio h
FE
0.7
±0.1
Unit: mm
5.0
±0.2
4.0
±0.2
0.7
±0.2
12.9
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
25
20
12
0.5
1
600
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
2.5
+0.6
–0.2
0.45
+0.15
–0.1
5.1
±0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
*2
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 1 A
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
50 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
25
20
12
2.3
±0.2
Typ
Max
Unit
V
V
V
100
200
60
0.13
0.40
1.2
200
10
1.0
800
nA
V
V
MHz
pF
Ω
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse
*3
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measurement circuit
1 kΩ
Rank
h
FE1
R
200 to 350
S
300 to 500
T
400 to 800
I
B
=
1 mA
f
=
1 kHz
V
=
0.3 V
V
B
V
V
V
A
R
on
=
V
B
×
1 000 (Ω)
V
A
−
V
B
Publication date: January 2003
SJC00215BED
1
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and semiconductors described in this material
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•
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•
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