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2SC4727R

产品描述TRANSISTOR,BJT,NPN,20V V(BR)CEO,8A I(C),SIP
产品类别分立半导体    晶体管   
文件大小31KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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2SC4727R概述

TRANSISTOR,BJT,NPN,20V V(BR)CEO,8A I(C),SIP

2SC4727R规格参数

参数名称属性值
Reach Compliance Codecompli
最大集电极电流 (IC)8 A
配置Single
最小直流电流增益 (hFE)100
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)1.5 W
表面贴装NO
Base Number Matches1

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Ordering number:ENN3871
NPN Epitaxial Planar Silicon Transistor
2SC4727
20V/8A Switching Applications
Features
· Adoption of MBIT process.
· Low saturation voltage.
· High-speed switching.
· Large current capacity.
· It is possible to make appliances more compact
because its height on board is 9.5mm.
· Effective in automatic inserting and counting stocked
amount because of being provided for radial taping.
Package Dimensions
unit:mm
2084B
[2SC4727]
10.5
1.9
4.5
1.2
2.6
1.4
1.2
7.5
1.6
0.5
0.5
1
2
3
1.0
8.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
2.5
2.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
30
20
5
8
12
1.5
1.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=6A
VCE=2V, IC=500mA
100*
70
250
MHz
Conditions
Ratings
min
typ
max
1
1
400*
Unit
µA
µA
* : The 2SC4727 is classified by 500mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33005TN (PC)/12099HA (KT)/5732MH (KOTO) No.3871–1/4

2SC4727R相似产品对比

2SC4727R 2SC4727S
描述 TRANSISTOR,BJT,NPN,20V V(BR)CEO,8A I(C),SIP TRANSISTOR,BJT,NPN,20V V(BR)CEO,8A I(C),SIP
Reach Compliance Code compli compli
最大集电极电流 (IC) 8 A 8 A
配置 Single Single
最小直流电流增益 (hFE) 100 140
最高工作温度 150 °C 150 °C
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 1.5 W 1.5 W
表面贴装 NO NO
Base Number Matches 1 1

 
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