Ordering number:ENN5316A
N-Channel Silicon MOSFET
2SK2555
DC/DC Converter Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm
2083B
[2SK2555]
6.5
5.0
4
1.5
2.3
0.5
0.85
0.7
0.8
1.6
5.5
7.0
1.2
7.5
0.6
0.5
1
2
3
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
unit:mm
2092B
[2SK2555]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
0.5
0.8
1
0.6
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81000TS (KOTO) TA-0529 No.5316–1/4
2SK2555
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW
≤
10µs, duty cycle
≤
1%
Tc=25˚C
Conditions
Ratings
30
±25
12
48
1
30
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±20V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=4A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1A
VDS=10V, VGS=10V, ID=1A
VDS=10V, VGS=10V, ID=1A
IS=6A, VGS=0
1.0
6
8
36
58
650
480
90
15
170
50
45
20
3
6
1.0
1.2
46
78
Conditions
Ratings
min
30
100
±10
2.5
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
VDD=15V
ID=6A
RL=2.5Ω
D
G
VOUT
P.G
50Ω
2SK2555
S
No.5316–2/4
2SK2555
20
ID -- VDS
10.0V
5.0V
Tc=25°C
4.0V
20
ID -- VGS
VDS=10V
Drain Current, I
D
– A
3.6V
10
Drain Current, I
D
– A
15
3.8V
15
3.4V
3.2V
10
5
5
VGS=2.8V
0
0
1
2
3
4
5
6
7
8
9
10
0
0
1
2
3
25
°
C
4
3.0V
Tc=
75
°
C
--25
°
C
5
6
IT01447
Drain-to-Source Voltage, V
DS
– V
120
110
IT01446
150
Gate-to-Source Voltage, V
GS
– V
RDS(on) -- VGS
Tc=25°C
ID=4A
6A
RDS(on) -- Tc
140
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
100
90
80
70
60
50
40
30
20
10
0
0
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
130
120
110
100
90
80
70
60
50
40
30
20
10
0
--60
=4V
I D=4A, V GS
=10V
I D=6A, V GS
2
4
6
8
10
12
14
16
18
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, V
GS
– V
2
IT01448
Case Temperature, Tc – ˚C
10
IT01449
| y
fs
| - I
D
VDS=10V
IS -- VSD
VGS=0
Forward Transfer Admittance, | yfs | – S
7
5
10
7
5
Forward Current, I
S
– A
Tc
3
2
=
5
°
--2
C
3
2
75
°
C
75
°
1.0
7
5
3
2
C
25
°
C
0.8
25
1.0
7
5
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
Drain Current, I
D
– A
5
3
2
10
IT01450
0.1
0.5
0.6
Tc=
°
C
0.7
--25
°
0.9
C
1.0
1.1
1.2
IT01451
Diode Forward Voltage, VSD – V
5
3
2
SW Time -- ID
VDS=15V
VGS=10V
Ciss, Coss, Crss – pF
tr
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time – ns
2
1000
7
5
3
2
100
7
5
3
2
10
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
0
5
10
15
20
25
30
IT01453
Ciss
Coss
100
7
5
3
2
tf
td (of
f)
Crss
td(on)
10
7
Drain Current, I
D
– A
IT01452
Drain-to-Source Voltage, V
DS
– V
No.5316–3/4
2SK2555
10
9
VGS -- Qg
VDS=10V
ID=1A
100
7
5
3
ASO
IDP=48A
<10µs
Gate-to-Source Voltage, V
GS
– V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
Drain Current, I
D
– A
2
ID=12A
10
7
5
3
2
1.0
7
5
2
10
0
µ
1m
s
s
10
DC
op
er
m
s
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
3
5
7
ati
on
Total Gate Charge, Qg – nC
1.2
IT01454
35
Drain-to-Source Voltage, V
DS
– V
1.0
2
3
5
7
10
2
3
5
IT01455
PD -- Ta
Allowable Power Dissipation, P
D
– W
PD -- Tc
Allowable Power Dissipation, P
D
– W
1.0
30
25
0.8
20
0.6
15
0.4
10
0.2
5
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
IT01480
Case Temperature, Tc – ˚C
IT01456
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.
PS No.5316–4/4
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