Ordering number:ENN2095A
NPN Epitaxial Planar Silicon Transistor
2SC3770
UHF, VHF Oscillator Mixer,
HF Amplifier Applications
Applications
· UHF/VHF frequency converters, local oscillators, HF
amplifiers.
Package Dimensions
unit:mm
2018B
[2SC3770]
Features
· High power gain : PG=15dB typ (f=0.4GHz).
· High cutoff frequency : f
T
=1.2GHz typ.
0.5
0.4
3
0.16
0 to 0.1
1
0.95 0.95
2
1.9
2.9
0.8
1.1
0.5
1.5
2.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
30
20
3
30
10
250
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
PG
VCB=20V, IE=0
VEB=2V, IC=0
VCE=10V, IC=3mA
VCE=10V, IC=3mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=10V, IC=5mA, f=0.4GHz
Rank
hFE
2
40 to 80
3
60 to 120
4
100 to 200
Conditions
Ratings
min
typ
max
1.0
10
40*
0.6
1.2
0.7
0.6
15
200*
Unit
µA
µA
GHz
pF
pF
dB
* : The 2SC3770 is classified by 3mA h
FE
as follows :
(Note) Marking : JY
h
FE
rank : 2, 3, 4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62404TN (PC)/N3098HA (KT)/5137KI/1066KI, TS No.2095–1/3
2SC3770
PG Test Circuit
3
VB
1
VCC
2kΩ
CH
L2
INPUT
C1
C2
L1
C3
C4
L3
C5
OUTPUT
2
f=400MHz
C1
C2
C3
C4
C5
L1
L2
L3
~20pF
~10pF
~10pF
~20pF
~30pF
2φ, l=40mm 2/3 t
2φ, l=40mm 2/3 t
1φ, l=40mm 1/2 t
32
28
IC -- VBE
VCE=10V
3
2
hFE -- IC
VCE=10V
Collector Current, IC – mA
DC Current Gain, hFE
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR05889
24
20
16
12
8
100
7
5
3
2
10
4
7
0
5
5
7
1.0
2
3
5
7
10
2
3
5
7 100
ITR05890
Base-to-Emitter Voltage, VBE – V
3
Collector Current, IC – mA
3
f T -- IC
Output Capacitance, Cob – pF
Reverse Transfer Capacitance, Cre – pF
Cob, Cre -- VCB
f=1MHz
VCB=10V
Gain-Bandwidth Product, fT – MHz
2
2
1.0
7
5
1.0
7
5
Cob
Cre
3
3
2
5
7
1.0
2
3
5
7
10
2
3
2
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
ITR05891
Collector-to-Base Voltage, VCB -- V
ITR05892
No.2095–2/3
2SC3770
20
PG -- IC
VCE=10V
f=400MHz
5
3
VCE(sat), VBE(sat) -- IC
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
16
2
1.0
7
5
3
2
VBE(sat)
12
8
0.1
7
5
(sat)
V CE
4
0
5
7
1.0
2
3
5
7
3
Collector Current, IC – mA
10
2
3
5
7
1.0
2
3
5
7
ITR05893
Collector Current, IC – mA
10
2
3
5
ITR05894
280
PC -- Ta
Collector Dissipation, P
C
– mW
240
200
160
120
80
40
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR05895
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject to
change without notice.
PS No.2095–3/3
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Power Gain, PG – dB
嵌入式系统
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