AP80N03GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
8mΩ
80A
S
Description
AP80N03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP80N03P) are available for low-profile
applications.
G
D
S
TO-220(P)
G D
S
TO-263(S)
Units
V
V
A
A
A
W
℃
℃
.
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
80
50
315
83.3
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.5
40
62
Unit
℃/W
℃/W
℃/W
1
201408263
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP80N03GS/P-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=32A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=24V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=24V
V
GS
=5V
V
DS
=15V
I
D
=40A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
6
9
-
50
-
-
42
5.2
26
9.9
100
37
60
1950
895
315
Max. Units
-
8
12
3
-
10
+100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.3V
T
j
=25℃, I
S
=80A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
80
315
1.3
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP80N03GS/P-HF
300
150
T
C
=25
o
C
250
V
G
=10V
V
G
=8.0V
T
C
=150
o
C
V
G
=10V
V
G
=8.0V
V
G
=6.0V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
200
V
G
=6.0V
100
V
G
=4.5V
150
V
G
=4.5V
100
50
50
V
G
= 2.5 V
0
0
1
2
3
4
5
6
0
0
1
2
3
V
G
= 2.5 V
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
.
11
1.8
I
D
=40A
10
I
D
=40A
1.6
T
C
=25 C
o
V
G
=10V
9
Normalized R
DS(ON)
1.4
R
DS(ON)
(m
Ω
)
8
1.2
7
1
6
0.8
5
3
4
5
6
7
8
9
10
11
0.6
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP80N03GS/P-HF
100
100
90
80
80
70
I
D
, Drain Current (A)
60
60
50
40
P
D
(W)
40
20
0
25
50
75
100
125
150
0
50
100
150
30
20
10
0
T
c
, Case Temperature (
o
C)
T
c
,Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
DUTY=0.5
100
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
0.2
100us
I
D
(A)
0.1
0.1
0.05
1ms
10
P
DM
t
0.02
T
C
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
1s
DC
100
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP80N03GS/P-HF
f=1.0MHz
16
10000
I
D
=40A
14
V
DS
=16V
V
GS
, Gate to Source Voltage (V)
12
V
DS
=20V
V
DS
=24V
C (pF)
1000
Ciss
10
8
Coss
6
Crss
4
2
0
0
10
20
30
40
50
60
70
80
90
100
100
1
5
9
13
17
21
25
29
V
DS
(V)
Q
G
, Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
.
Fig 10. Typical Capacitance Characteristics
100
3
10
2
I
S
(A)
T
j
=150
o
C
1
T
j
=25
o
C
V
GS(th)
(V)
1
0
-50
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature (
o
C)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
