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BZX585 series
Voltage regulator diodes
Rev. 5 — 11 October 2016
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in an SOD523 (SC-79) ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation:
40 W
Total power dissipation:
300 mW
AEC-Q101 qualified
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Two tolerance series:
2
% and
5
%
Low differential resistance
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 100 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
1.1
40
Unit
V
W
Pulse test: t
p
300
s;
0.02.
t
p
= 100
s;
square wave; T
j
= 25
C
before surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
1
2
006aaa152
Simplified outline
[1]
Graphic symbol
1
2
[1]
The marking bar indicates the cathode.
NXP Semiconductors
BZX585 series
Voltage regulator diodes
3. Ordering information
Table 3.
Ordering information
Package
Name
BZX585-B2V4 to
BZX585-C75
[1]
[1]
Type number
Description
plastic surface-mounted package; 2 leads
Version
SOD523
SC-79
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking
code
C1
C2
C3
C4
C5
C6
C7
C8
C9
C0
E1
E2
E3
E4
E5
E6
E7
E8
E9
Type number
BZX585-B15
BZX585-B16
BZX585-B18
BZX585-B20
BZX585-B22
BZX585-B24
BZX585-B27
BZX585-B30
BZX585-B33
BZX585-B36
BZX585-B39
BZX585-B43
BZX585-B47
BZX585-B51
BZX585-B56
BZX585-B62
BZX585-B68
BZX585-B75
-
Marking
code
E0
EA
EB
EC
ED
EE
EF
EG
EH
EK
EL
EM
EN
EP
ER
ES
ET
EU
-
Type number
BZX585-C2V4
BZX585-C2V7
BZX585-C3V0
BZX585-C3V3
BZX585-C3V6
BZX585-C3V9
BZX585-C4V3
BZX585-C4V7
BZX585-C5V1
BZX585-C5V6
BZX585-C6V2
BZX585-C6V8
BZX585-C7V5
BZX585-C8V2
BZX585-C9V1
BZX585-C10
BZX585-C11
BZX585-C12
BZX585-C13
Marking
code
F1
F2
F3
F4
F5
F6
F7
F8
F9
F0
H1
H2
H3
H4
H5
H6
H7
H8
H9
Type number
BZX585-C15
BZX585-C16
BZX585-C18
BZX585-C20
BZX585-C22
BZX585-C24
BZX585-C27
BZX585-C30
BZX585-C33
BZX585-C36
BZX585-C39
BZX585-C43
BZX585-C47
BZX585-C51
BZX585-C56
BZX585-C62
BZX585-C68
BZX585-C75
-
Marking
code
H0
HA
HB
HC
HD
HE
HF
HG
HH
HK
HL
HM
HN
HP
HR
HS
HT
HU
-
Type number
BZX585-B2V4
BZX585-B2V7
BZX585-B3V0
BZX585-B3V3
BZX585-B3V6
BZX585-B3V9
BZX585-B4V3
BZX585-B4V7
BZX585-B5V1
BZX585-B5V6
BZX585-B6V2
BZX585-B6V8
BZX585-B7V5
BZX585-B8V2
BZX585-B9V1
BZX585-B10
BZX585-B11
BZX585-B12
BZX585-B13
BZX585_SERIES
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 5 — 11 October 2016
2 of 13
NXP Semiconductors
BZX585 series
Voltage regulator diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
ambient temperature
junction temperature
storage temperature
t
p
= 100
s;
square wave; T
j
= 25
C
before surge
Device mounted on an FR4 Printed-Circuit Board (PCB) with approximately 35 mm
2
Cu area at cathode
tab.
[1]
Conditions
Min
-
-
Max
200
see
Table 8
and
9
40
300
+150
+150
+150
Unit
mA
P
ZSM
P
tot
T
amb
T
j
T
stg
[1]
[2]
[1]
-
-
65
65
65
W
mW
C
C
C
T
amb
25
C
[2]
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
350
65
Unit
K/W
K/W
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB) with approximately 35 mm
2
Cu area at cathode
tab.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
300
s;
0.02.
Conditions
[1]
Min
-
-
Typ
-
-
Max
0.9
1.1
Unit
V
V
BZX585_SERIES
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 5 — 11 October 2016
3 of 13
NXP Semiconductors
BZX585 series
Voltage regulator diodes
Table 8.
Characteristics per type; BZX585-B2V4 to BZX585-C24
T
j
= 25
C unless otherwise specified.
BZX585- Sel Working
xxx
voltage
V
Z
(V)
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
BZX585_SERIES
Differential resistance Reverse
current
r ()
dif
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
I
R
(A)
I
Z
= 1 mA
Typ
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
I
Z
= 5 mA
Max Max
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)
[1]
d
I
ZSM
(A)
[2]
Max
2.45
2.52
2.75
2.84
3.06
3.15
3.37
3.47
3.67
3.78
3.98
4.10
4.39
4.52
4.79
4.94
5.20
5.36
5.71
5.88
6.32
6.51
6.94
7.14
7.65
7.88
8.36
8.61
9.28
9.56
10.20 20
10.50
5.4
6
6.9
7.9
9
10
110
105
2.5
2.5
4.5
6.0
8
110
3
3.8
5.2
7
120
3
3.2
4.3
6.2
150
4
2.5
3.6
5.3
170
4
1.2
3.0
4.5
215
6
0.4
2.2
3.7
250
6
2
1.0
2.5
275
6
2.7
0.5
1.2
300
6
3.5
1.2
0.2
325
6
3.5
1.7
0
350
6
3.5
1.9
0
370
6
3.5
1.9
0
390
6
3.5
1.8
0
410
6
3.5
1.6
0
425
6
3.5
1.4
0
440
6
Max Typ
V
R
(V) Min
3.5
Typ
1.3
Max
0
Max
450
Max
6
2.35
2.28
2.65
2.57
2.94
2.85
3.23
3.14
3.53
3.42
3.82
3.71
4.21
4.09
4.61
4.47
5.00
4.85
5.49
5.32
6.08
5.89
6.66
6.46
7.35
7.13
8.04
7.79
8.92
8.65
9.80
9.50
10.78 11.22 25
10.45 11.55
11.76 12.24 25
11.40 12.60
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 5 — 11 October 2016
4 of 13
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