Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
Objectid | 1935487289 |
零件包装代码 | TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
YTEOL | 0 |
最大集电极电流 (IC) | 0.15 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 280 |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | NPN |
最大功率耗散 (Abs) | 0.5 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 200 MHz |
2SC4641U | 2SA1783S | 2SA1783U | 2SC4641S | 2SC4641T | 2SA1783T | |
---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43, 3 PIN |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
针数 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknow | unknow | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.15 A | 0.15 A | 0.15 A | 0.15 A | 0.15 A | 0.15 A |
集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 280 | 140 | 280 | 140 | 200 | 200 |
JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | NPN | PNP | PNP | NPN | NPN | PNP |
最大功率耗散 (Abs) | 0.5 W | 0.5 W | 0.5 W | 0.5 W | 0.5 W | 0.5 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO |
端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 200 MHz | 180 MHz | 180 MHz | 200 MHz | 200 MHz | 180 MHz |
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