TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DEVICES
LEVELS
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
2N3501
2N3501L
2N3501UB
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
@ T
C
= +25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
stg
2N3498* 2N3501*
2N3499* 2N3501*
100
100
6.0
500
1.0
5.0
-65 to +200
150
150
6.0
300
Unit
Vdc
Vdc
Vdc
mAdc
W
W
°C
Operating & Storage Junction Temperature Range
TO-5*
2N3498L, 2N3499L
2N2500L, 2N3501L
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Max.
30
175
Unit
°C/W
°C/W
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
1. Derate linearly 5.71 W/°C for T
A
> 25°C
2. Derate linearly 28.6 W/°C for T
C
> 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N3498, 2N3499
2N3500, 2N3501
Collector-Base Cutoff Current
V
CB
= 50Vdc
2N3498, 2N3499
V
CB
= 75Vdc
2N3500, 2N3501
V
CB
= 100Vdc
2N3498, 2N3499
V
CB
= 150Vdc
2N3500, 2N3501
V
(BR)CEO
100
150
50
50
10
10
Vdc
ηAdc
ηAdc
μAdc
μAdc
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
Unit
Symbol
Min.
Max.
I
CBO
3 PIN
2N3501UB
T4-LDS-0056 Rev. 1 (080812)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 6.0Vdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1mAdc, V
CE
= 10Vdc
I
C
= 1.0mAdc, V
CE
= 10Vdc
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3500
2N3501
2N3498
2N3499
All Types
2N3498, 3N3499
2N3500, 2N3501
All Types
2N3498, 3N3499
2N3500, 2N3501
V
CE(sat)
20
35
25
50
35
75
40
100
15
20
15
20
0.2
0.6
0.4
0.8
1.4
1.2
Vdc
120
300
I
EBO
Symbol
Min.
Max.
Unit
25
10
ηAdc
μAdc
I
C
= 10mAdc, V
CE
= 10Vdc
h
FE
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 300mAdc, V
CE
= 10Vdc
I
C
= 500mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 300mAdc, I
B
= 30mAdc
I
C
= 150mAdc, I
B
= 15mAdc
Base-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 300mAdc, I
B
= 30mAdc
I
C
= 150mAdc, I
B
= 15mAdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude, Forward Current Transfer Ratio
I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
2N3498, 2N3499
2N3500, 2N3501
C
obo
10
8.0
80
pF
pF
Symbol
|h
fe
|
Min.
1.5
Max.
8.0
Unit
C
ibo
T4-LDS-0056 Rev. 1 (080812)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
EB
= 5Vdc; I
C
= 150mAdc; I
B1
= 15mAdc
Turn-Off Time
I
C
= 150mAdc; I
B1
= I
B2
= 15mAdc
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, t
r
≥
10ηs; 1 Cycle, t = 1.0s
Test 1
V
CE
= 10Vdc, I
C
= 500mAdc
V
CE
= 16.67Vdc, I
C
= 300mAdc
V
CE
= 10Vdc, I
C
= 113mAdc
Test 2
V
CE
= 50Vdc, I
C
= 100mAdc
V
CE
= 50Vdc, I
C
= 23mAdc
Test 3
V
CE
= 80Vdc, I
C
= 40mAdc
V
CE
= 80Vdc, I
C
= 14mAdc
Clamped Switching
T
A
= +25°C
Test 1
I
B
= 85mAdc, I
C
= 500mAdc
I
B
= 50mAdc, I
C
= 300mAdc
2N3498, 2N3499
2N3500, 2N3501
All Types
2N3501UB
All Types
2N3501UB
2N3498, 2N3499
2N3500, 2N3501
2N3501UB
Symbol
t
on
Min.
Max.
115
Unit
ηs
t
off
1150
ηs
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
T4-LDS-0056 Rev. 1 (080812)
Page 3 of 3
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