Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | International Rectifier ( Infineon ) |
包装说明 | CHIP CARRIER, R-CBCC-N3 |
针数 | 3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 500 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 75 A |
最大漏源导通电阻 | 0.0056 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-CBCC-N3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 300 A |
认证状态 | Not Qualified |
参考标准 | MIL-19500/673 |
表面贴装 | YES |
端子面层 | TIN LEAD |
端子形式 | NO LEAD |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
JANSG2N7468U2 | JANSH2N7468U2 | JANSF2N7468U2 | |
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描述 | Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN |
是否无铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 |
厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
包装说明 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
针数 | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 500 mJ | 500 mJ | 500 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | 60 V | 60 V |
最大漏极电流 (ID) | 75 A | 75 A | 75 A |
最大漏源导通电阻 | 0.0056 Ω | 0.0056 Ω | 0.0056 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
JESD-609代码 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 300 A | 300 A | 300 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
参考标准 | MIL-19500/673 | MIL-19500/673 | MIL-19500/673 |
表面贴装 | YES | YES | YES |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | NO LEAD | NO LEAD | NO LEAD |
端子位置 | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
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