The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 November 2010.
INCH-POUND
MIL-PRF-19500/706B
23 August 2010
SUPERSEDING
MIL-PRF-19500/706A
21 January 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
(TOTAL DOSE AND SINGLE EVENT EFFECTS)
TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, AND 2N7499T2,
JANTXVR AND JANSR
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode,
MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of product
assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating
(E
AS
) and maximum avalanche current (I
AS
).
1.2 Physical dimensions. See figure 1, (TO-205AF).
*
1.3 Maximum ratings. T
A
= +25°C, unless otherwise specified.
Type
P
T
(1)
T
C
=
+25°C
W
2N7497T2
2N7498T2
2N7499T2
25
25
25
P
T
T
A
=
+25°C
W
0.71
0.71
0.71
V
DS
V
DG
V
GS
I
D1
(3) (4)
T
C
=+25°C
A dc
10.5
6.7
5.2
I
D2
(3) (4)
T
C
=
+100°C
A dc
6.5
4.3
3.3
I
S
I
DM
(5)
T
J
and
T
STG
°C
-55
to
+150
V
ISO
70,000 ft.
altitude
V dc
N/A
N/A
250
R
θ
JC
(2)
°C/W
5.0
5.0
5.0
V dc
130
200
250
V dc
130
200
250
V dc
±20
±20
±20
A dc
10.5
6.7
5.2
A (pk)
42
26.8
20.8
(1) Derate linearly by 0.2 W/°C for T
C
> +25°C.
(2) See figure 2, thermal impedance curves.
(3) The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and device construction
to 12 A.
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
(4) See figure 3, maximum drain current graphs.
(5) I
DM
= 4 X I
D1
as defined in note (2).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/706B
1.4 Primary electrical characteristics at T
C
= +25°C.
Type
Min V
(BR)DSS
V
GS
= 0
I
D
= 1.0 mA
dc
V
GS(TH)1
V
DS
≥
V
GS
I
D
= 1.0 mA dc
Max I
DSS1
V
GS
= 0
V
DS
= 80
percent of
rated V
DS
Max r
DS(on)
(1)
V
GS
= 12V, I
D
= I
D2
E
AS
T
J
= +25°C
V dc
2N7497T2
2N7498T2
2N7499T2
130
200
250
V dc
Min
Max
2.5
4.5
2.5
4.5
2.5
4.5
µA
dc
10
10
10
Ω
0.100
0.240
0.420
T
J
= +150°C
Ω
0.230
0.552
0.924
mJ
164
149
142
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or
https://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/706B
Dimensions
Symbol
(see
note 3)
Inches
Millimeters
Min
Max
.355
.180
.041
.370
Min
8.00
4.06
0.23
8.64
Max
9.02
4.57
1.04
9.40
*
*
CD
CH
h
.315
.160
.009
.340
*
HD
LC
LD
LL
LU
L
1
L
2
P
Q
r
TL
.200 BSC
.016
.500
.016
.021
.750
.019
.050
.250
.070
.050
.010
.029
.028
.045
.034
5.08 BSC
0.41
12.70
0.41
0.53
19.05
0.48
1.27
6.35
1.78
1.27
0.25
0.74
0.71
1.14
0.86
*
TW
α
Term 1
Term 2
Term 3
45° BSC
Source
Gate
Drain
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Lead number 1 is the source, lead number 2 is the gate, and lead number 3 is the drain which is electrically
connected to the case. Lead 4 is omitted from this outline.
4. Radius (r) applies to both inside corners of tab.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 1. Physical dimensions for TO-205AF.
3
MIL-PRF-19500/706B
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
I
AS
........ Rated avalanche current, nonrepetitive
nC ........ nano Coulomb.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (TO-205AF) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Internal construction. Multiple chip construction shall not be permitted.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge
protection.
3.5.1 Handling. Metal oxide semiconductor (MOS) devices must be handled with certain precautions to avoid
damage due to the accumulation of static charge. However, the following handling practices are recommended
(see 3.5).
a.
b.
c.
d.
e.
f.
g.
Devices should be handled on benches with conductive handling devices.
Ground test equipment, tools, and personnel handling devices.
Do not handle devices by the leads.
Store devices in conductive foam or carriers.
Avoid use of plastic, rubber or silk in MOS areas.
Maintain relative humidity above 50 percent if practical.
Care should be exercised during test and troubleshooting to apply not more than maximum rated
voltage to any lead.
Gate must be terminated to source, R
≤
or 100 kΩ, whenever bias voltage is applied drain to source.
h.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of
the country of origin may be omitted from the body of the transistor but shall be retained on the initial container.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4
MIL-PRF-19500/706B
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.1.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die
design or process change is introduced. See the design safe operation area figures herein.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
