CNY30X, CNY34X
CNY30, CNY34
PHOTON COUPLED ISOLATOR Ga As
LIGHT ACTIVATED SCR
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 2 available lead forms : -
- STD
-
G form
2.54
7.0
6.0
7.62
max.
1
2
3
Dimensions in mm
6
5
4
8.3 max.
DESCRIPTION
The CNY30, CNY34 are optically coupled
isolators consisting of infrared light emitting
diode and a light activated silicon controlled
rectifier in a standard 6pin dual in line plastic
package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High Surge Anode Current (5.0 A)
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High Blocking Voltage (200V*
1
, 400V*
1
)
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Low Turn on Current (5mA typical)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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10A, T
2
L compatible, Solid State Relay
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25W Logic Indicator Lamp Driver
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400V Symmetrical transistor coupler
0.5
min.
0.48
5.1
max.
3.9
3.1
0.25
15°
Max
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Forward Current (Peak)
(1
µ
s pulse, 300pps)
Reverse Voltage
Power Dissipation
DETECTOR
Peak Forward Voltage
CNY30
CNY34
Peak Reverse Gate Voltage
RMS On-state Current
Peak On-state Current
(100
µ
s, 1% duty cycle)
Surge Current (10ms)
Power Dissipation
200V*
1
400V*
1
6V
300mA
10A
5A
300mW
60mA
3A
6V
100mW
OPTION SM
SURFACE MOUNT
OPTION G
8.3 max
1.2
0.6
10.2
9.5
1.4
0.9
0.26
10.16
*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (R
GK
< 56k
Ω
)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91039-AAS/A3
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
13/11/97
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Peak Off-state Voltage (V
DM
)
CNY30
CNY34
Peak Reverse Voltage (V
RM
)
CNY30
CNY34
MIN TYP MAX UNITS
1.2
3
1.5
V
V
TEST CONDITION
I
F
= 10mA
I
R
= 10
µ
A
R
GK
=10k
Ω,
I
D
=
50µ
A,
T
A
= 100°C
R
GK
=10k
Ω,
I
D
=
150µ
A,
T
A
=100°C
R
GK
=10k
Ω,
I
D
=
50µ
A,
T
A
=100°C
R
GK
=10k
Ω,
I
D
=
150µ
A,
T
A
=100°C
I
TM
= 300mA
R
GK
=10k
Ω,
I
F
=
0
,
V
DM
=200V, T
A
=100°C
R
GK
=10k
Ω,
I
F
=
0
,
V
DM
=400V, T
A
=100°C
R
GK
=10k
Ω,
I
F
=
0
,
V
DM
=200V, T
A
=100°C
R
GK
=10k
Ω,
I
F
=
0
,
V
DM
=400V, T
A
=100°C
V
AK
=50V, R
GK
=10k
Ω
V
AK
=100V, R
GK
=27k
Ω
See note 1
See note 1
V
IO
= 500V (note 1)
V = 0, f =1MHz
Output
(note 2)
200
400
200
400
V
V
V
V
On-state Voltage (V
TM
)
Off-state Current (I
DM
)
CNY30
CNY34
Reverse Current (I
R
)
CNY30
CNY34
1.1
1.3
50
150
50
150
V
µ
A
µ
A
µ
A
µ
A
Coupled
Input Current to Trigger ( I
FT
) (note 2)
20
11
mA
mA
V/
µ
s
V
RMS
V
PK
Ω
pF
Coupled dv/dt, Input to Output (dv/dt)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Input-output Capacitance
Cf
500
5300
7500
10
11
2
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
5/12/00
DB91039-AAS/A3
Input Current to Trigger vs.
Anode to Cathode Voltage
FT
100
Normalized input current to trigger I
40
20
10
4
2
1.0
0.4
0.2
0.1
1
1k
Ω
10k
Ω
27k
Ω
56k
Ω
5
10
50 100 200
R
GK
=300
Ω
Normalized to
V
AK
= 50V
R
GK
=10k
Ω
T
A
= 25 °C
FT
Input Current to Trigger vs.
Ambient Temperature
12
10
4
2
1.0
0.4
0.2
56k
Ω
0
Normalized to V
AK
= 50V,
R
GK
=10k
Ω,
T
A
= 25 °C
20 40 60
80 100 120
10k
Ω
27k
Ω
1k
Ω
R
GK
=300
Ω
Normalized input current to trigger I
0.1
-60 -40 -20
Anode to cathode voltage V
AK
( V )
Input Current to Trigger Distribution
vs. Ambient Temperature
FT
Ambient temperature T
A
( °C )
Input Current to Trigger vs.
Pulse Width
FT
10
4
2
1
10th percentile
0.4
0.2
0.1
90th percentile
Normalized input current to trigger I
Normalized input current to trigger I
Normalized to
V
AK
= 50V
R
GK
=10k
Ω
T
A
= 25 °C
100
40
20
10
4
2
1
0.4
0.2
0.1
1
2
56k
Ω
R
GK
=300
Ω
1k
Ω
10k
Ω
Normalized to
V
AK
= 50V
R
GK
=10k
Ω
T
A
= 25 °C
27k
Ω
-40 -20 0 20 40 60 80 100
Ambient temperature T
A
( °C )
Turn on Time vs. Input Current
24
22
20
18
16
14
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Input current I
F
(mA)
5/12/00
4 6 10 20 40 60 100 200 400 1000
Pulse width (
µ
s )
Input Characteristics I
F
vs. V
F
10k
Ω
R
GK
=1k
Ω
Turn on time t
on
(
µ
s)
V
AK
= 50V
t
on
= t
d
+ t
r
t
r
= 1
µ
s
Forward current I
F
(mA)
100
40
20
10
4
2
1
0.4
0.2
0.1
0
0.5
1
1.5
2
2.5
3
Forward voltage V
F
( V )
DB91039-AAS/A3
25°C
100°C
-55°C
56k
Ω
Holding Current vs. Ambient
Temperature
Transient thermal impedance ( °C / Watt )
10000
4000
2000
1000
400
200
100
40
20
10
R
GK
=300
Ω
1k
Ω
Normalized to
V
AK
= 50V
R
GK
=10k
Ω
T
A
= 25 °C
1000
Maximum Transient Thermal Impedence
1. Lead temperature measured at the
widest portion of the SCR anode lead.
400
2. Ambient temperature measured at
200
a point 1/2" from the device
.
Holding current I
H
(
µ
A)
100
40
20
10
4
2
1
0.001
Junction to ambient
n to lea
d
27k
Ω
56k
Ω
-60 -40 -20
0
20 40 60
80 100 120
0.01
0.1
1 2 4 10
Junctio
10k
Ω
100
Ambient temperature T
A
( °C )
Off State Forward Current vs.
Ambient Temperature
Normalized forward current off state ( I
D
)
Maximum allowable temperature ( °C )
10000
4000
2000
1000
400
200
100
40
20
10
4
2
1
0
25
50
75
100
Ambient temperature T
A
( °C )
dV/dt vs. Ambient temperature
1000
400
100
40
10
4
1
0.4
0.1
25
50
75
100
0
Ambient temperature T
A
( °C )
27k
Ω
56k
Ω
1k
Ω
10k
Ω
R
GK
=300
Ω
2
Junction temperature = 100°C
Time (seconds)
On State Current vs. Maximum
Allowable Temperature
100
90
80
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
On state current (
Α
)
1.0
1.
2.
3.
4.
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
Normalized to
V
AK
= 50V
T
A
= 25 °C
V
AK
= 400V
V
AK
= 200V
V
AK
= 50V
Critical rate of rise applied forward voltage dV/dt (V/
µ
s)
On State Characteristics
1
0.4
On state current I
T
(A)
0.2
0.1
0.04
0.02
0.01
Junction temperature = 25°C
Increases to forward
breakover voltage
1
2
3
On state voltage V
T
( V )
4
DB91039-AAS/A3
5/12/00
NXP MCU
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