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Datasheet> 器件分类 > 分立半导体> 晶体管> 2SC2996-RTE85L

2SC2996-RTE85L: 产品描述TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal; 产品类别分立半导体晶体管; 文件大小169KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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2SC2996-RTE85L概述

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC2996-RTE85L规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	0.05 A
基于收集器的最大容量	1.3 pF
集电极-发射极最大电压	30 V
配置	SINGLE
最小直流电流增益 (hFE)	40
最高频带	VERY HIGH FREQUENCY BAND
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
最高工作温度	125 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	350 MHz
Base Number Matches	1

2SC2996-RTE85L相似产品对比

	2SC2996-RTE85L	2SC2996-OTE85R	2SC2996-OTE85L	2SC2996-RTE85R	2SC2996-YTE85R	2SC2996-YTE85L	2SC2996TE85R	2SC2996TE85L
描述	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
基于收集器的最大容量	1.3 pF	1.3 pF	1.3 pF	1.3 pF	1.3 pF	1.3 pF	1.3 pF	1.3 pF
集电极-发射极最大电压	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	40	70	70	40	120	120	40	40
最高频带	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	350 MHz	350 MHz	350 MHz	350 MHz	350 MHz	350 MHz	350 MHz	350 MHz
Base Number Matches	1	1	1	1	1	1	1	1

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