OM6543SP1/SP2 OM6545SP1/SP2 OM6558SP1/SP2
OM6544SP1/SP2 OM6557SP1/SP2 OM6559SP1/SP2
500 Volt And 1000 Volt, 5 To 25 Amp,
N-Channel IGBTs In Multi-Chip Packages
FEATURES
•
•
•
•
Two Or Four Uncommitted IGBT’s
2500V Isolated Packages
Low Turn-Off Switching Losses
3.5V Typical V
CE(sat)
APPLICATIONS
•
•
•
•
AC Solid State Relays
Push-Pull Converters
Audio Amplifier Output Stage
Strobe Power Stage
DESCRIPTION
This series of 500 Volt and 1000 Volt, 5 Amp to 25 Amp IGBT power modules feature the latest direct bonded
copper technology (DBC) providing optimum thermal management as well as component isolation. These
devices are available in both dual and quad configurations.
MAXIMUM RATINGS FOR IGBTS (Per Device)
500V
OM6543 OM6544
I
C
@ T
C
= 25°C
I
C
@ T
C
= 85°C
V
(BR)CES
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 85°C
T
J
, T
tsg
Continuous Collector Current
Continuous Collector Current
Collector to Emitter Breakdown Voltage
Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating and Storage Temperature
10
5
500
±20
35
16
26
12
500
±20
68
36
OM6545
49
25
500
±20
147
75
10
5
1000
±20
35
16
1000V
OM6557 OM6558
21
10
1000
±20
68
55
OM6559
25
15
1000
±20
80
55
Units
A
A
V
V
W
W
°C
-40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150
3.1
MODULE THERMAL CHARACTERISTICS
Rq
JC
, IGBT
Rq
CS
, Module
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink (1)
4
0.1
1.2
0.1
0.85
0.1
1.7
0.1
1.7
0.1
1.2
0.1
°C/W
°C/W
SCHEMATIC
Collector
PIN CONNECTIONS
OM65XXSP1
OM65XXSP2
1 2 3
4 5 6
1 2 3
4 5 6
7 8 9
10 11 12
Gate
GCE
GCE
GCE
GCE
GCE
GC E
Pin 1, 4: Gate
Pin 2, 5: Collector
Pin 3, 6: Emitter
Emitter
Pin 1, 4, 7, 10: Gate
Pin 2, 5, 8, 11: Collector
Pin 3, 6, 9, 12: Emitter
2 08 R0
3.1 - 181
OM6543SP1/SP2 - OM6559SP1/SP2
OM6543SP1/OM6543SP2
IGBT CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter - OFF
Symbol Parameter
V
(BR)CES
Collector to Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
I
GES
Gate Emitter Leakage
Current
Parameter - ON
Symbol Parameter
V
GE(th)
V
CE(sat)
V
CE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Emitter
Saturation Voltage
Dynamic
Symbol Parameter
G
fs
C
iss
C
oss
C
res
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Switching Losses
Min.
Typ.
2
260
50
20
37
150
350
810
0.95
Max.
Units
S
pF
pF
pF
nS
nS
nS
nS
mJ
Test Conditions
V
CE
= 20 V, I
C
= 5 A
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
V
CC
= 400 V, I
C
= 5 A
V
GE
= 15 V
R
g
= 47
L = .1 mH
T
j
= 150°C
3
V
Min.
500
Typ.
Max.
Units
V
Test Conditions
V
GE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
j
= 150°C
V
GE
= ±20 V
V
CE
= 0 V
0.25
1
±100
mA
mA
nA
Min.
2
Typ.
3.2
Max.
4
Units
V
V
Test Conditions
V
CE
= V
GE
, I
C
= 1mA
V
GE
= 15 V, I
C
= 10 A
V
GE
= 15 V, I
C
= 5 A
T
j
= 150°C
3.1
T
d(on)
T
r
T
d(off)
T
f
E
ts
3.1 - 182
OM6543SP1/SP2 - OM6559SP1/SP2
OM6544SP1/OM6544SP2
IGBT CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter - OFF
Symbol Parameter
V
(BR)CES
Collector to Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
I
GES
Gate Emitter Leakage
Current
Parameter - ON
Symbol Parameter
V
GE(th)
V
CE(sat)
V
CE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Emitter
Saturation Voltage
Dynamic
Symbol Parameter
G
fs
C
iss
C
oss
C
res
T
d(on)
T
r
T
d(off)
T
f
E
ts
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Switching Losses
Min.
Typ.
6
980
106
30
56
115
170
300
1
Max.
Units
S
pF
pF
pF
nS
nS
nS
nS
mJ
Test Conditions
V
CE
= 20 V, I
C
= 10 A
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
V
CC
= 400 V, I
C
= 10 A
V
GE
= 15 V
R
g
= 47
L = .1 mH
T
j
= 150°C
3
V
Min.
500
Typ.
Max.
Units
V
Test Conditions
V
GE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
j
= 150°C
V
GE
= ±20 V
V
CE
= 0 V
0.25
1
±100
mA
mA
nA
Min.
2
Typ.
2.6
Max.
4
Units
V
V
Test Conditions
V
CE
= V
GE
, I
C
= 1mA
V
GE
= 15 V, I
C
= 26 A
V
GE
= 15 V, I
C
= 12 A
T
j
= 150°C
3.1
3.1 - 183
OM6543SP1/SP2 - OM6559SP1/SP2
OM6545SP1/OM6545SP2
IGBT CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter - OFF
Symbol Parameter
V
(BR)CES
Collector to Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
I
GES
Gate Emitter Leakage
Current
Parameter - ON
Symbol Parameter
V
GE(th)
V
CE(sat)
V
CE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Emitter
Saturation Voltage
Dynamic
Symbol Parameter
G
fs
C
iss
C
oss
C
res
T
d(on)
T
r
T
d(off)
T
f
E
ts
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Switching Losses
Min.
Typ.
6
980
106
30
56
115
170
300
1
Max.
Units
S
pF
pF
pF
nS
nS
nS
nS
mJ
Test Conditions
V
CE
= 20 V, I
C
= 10 A
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
V
CC
= 400 V, I
C
= 10 A
V
GE
= 15 V
R
g
= 47
L = .1 mH
T
j
= 150°C
3
V
Min.
500
Typ.
Max.
Units
V
Test Conditions
V
GE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
j
= 150°C
V
GE
= ±20 V
V
CE
= 0 V
0.25
1
±100
mA
mA
nA
Min.
2
Typ.
2.6
Max.
4
Units
V
V
Test Conditions
V
CE
= V
GE
, I
C
= 1mA
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 25 A
T
j
= 150°C
3.1
3.1 - 184
OM6543SP1/SP2 - OM6559SP1/SP2
OM6557SP1/OM6557SP2
IGBT CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter - OFF
Symbol Parameter
V
(BR)CES
Collector to Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
I
GES
Gate Emitter Leakage
Current
Parameter - ON
Symbol Parameter
V
GE(th)
V
CE(sat)
V
CE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Emitter
Saturation Voltage
Dynamic
Symbol Parameter
G
fs
C
iss
C
oss
C
res
T
d(on)
T
r
T
d(off)
T
f
E
ts
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Switching Losses
Min.
Typ.
1.7
650
50
20
50
200
200
300
2.4
Max.
Units
S
pF
pF
pF
nS
nS
nS
nS
mJ
Test Conditions
V
CE
= 20 V, I
C
= 15 A
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
V
CC
= 600 V, I
C
= 5 A
V
GE
= 15 V
R
g
= 3.3
L = .1 mH
T
j
= 150°C
3.8
V
V
GE
= 15 V, I
C
= 5 A
T
j
= 150°C
Min.
4.5
3.5
Typ.
Max.
6.5
Units
V
V
Test Conditions
V
CE
= V
GE
, I
C
= 1mA
V
GE
= 15 V, I
C
= 10 A
0.25
1
±100
mA
mA
nA
Min.
1000
Typ.
Max.
Units
V
Test Conditions
V
GE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
j
= 150°C
V
GE
= ±20 V
V
CE
= 0 V
3.1
3.1 - 185
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