2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
P-Channel JFETs
2N5114JAN/JANTX/JANTXV
2N5115JAN/JANTX/JANTXV
2N5116JAN/JANTX/JANTXV
PRODUCT SUMMARY
Part Number
2N5114
2N5115
2N5116
V
GS(off)
(V)
5 to 10
3 to 6
1 to 4
r
DS(on)
Max (W)
75
100
150
I
D(off)
Typ (pA)
–10
–10
–10
t
ON
Max (ns)
16
30
42
FEATURES
D
D
D
D
D
Low On-Resistance: 2N5114 <75
W
Fast Switching—t
ON
: 16 ns
High Off-Isolation—I
D(off)
: –10 pA
Low Capacitance: 6 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The 2N5114JAN/JANTX/JANTXV series consists of
p-channel JFET analog switches designed to provide low
on-resistance, good off-isolation, and fast switching. These
JFETs are optimized for use in complementary switching
applications with the Vishay Siliconix 2N4856A series.
TO-206AA
(TO-18)
S
1
2
G
Case
Top View
3
D
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 200_C
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 3 mW/_C above 25_C
www.vishay.com
9-1
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5114
2N5115
2N5116
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Symbol
Test Conditions
Typ
a
Min Max Min
Max Min
Max Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
G
= 1
mA
, V
DS
= 0 V
V
DS
= –15 V, I
D
= –1 nA
V
DS
= –18 V
V
GS
= 0 V
V
DS
= –15 V
45
30
5
–30
10
–90
30
3
6
30
V
1
4
mA
pA
mA
–15
5
0.01
–5
–10
–10
–10
–0.02
–0.02
–0.02
–1.0
–0.7
–0.5
75
–0.7
–1
–1.3
–1
–500
500
1
–60
500
1
–5
–25
500
1
V
GS
= 20 V, V
DS
= 0 V
Gate Reverse Current
Gate Operating Current
c
I
GSS
I
G
T
A
= 150_C
V
DG
= –15 V, I
D
= –1 mA
V
GS
= 12 V
V
DS
= –15 V
Drain Cutoff Current
I
D(off)
V
DS
= –15 V
T
A
= 150_C
V
GS
= 7 V
V
GS
= 5 V
V
GS
= 12 V
V
GS
= 7 V
V
GS
= 5 V
I
D
= –15 mA
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= –7 mA
I
D
= –3 mA
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
DS(on)
V
GS(F)
V
GS
= 0 V, I
D
= –1 mA
I
G
= –1 mA , V
DS
= 0 V
–500
–500
pA
–1
–1
m
mA
–0.8
–0.6
100
–1
150
–1
V
W
V
Dynamic
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
r
ds(on)
C
iss
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
V
GS
= 12 V
C
rss
V
DS
= 0 V
f = 1 MHz
V
GS
= 7 V
V
GS
= 5 V
20
5
6
6
75
25
7
7
7
100
25
175
27
pF
W
Switching
Turn-On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
c. This parameter not registered with JEDEC.
See Switching Circuit
6
15
8
30
20
60
PSCIA
6
10
10
20
25
35
ns
www.vishay.com
9-2
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
SWITCHING TIME TEST CIRCUIT
2N5114
V
DD
V
GG
R
L
*
R
G
*
I
D(on)
V
GS(H)
V
GS(L)
*Non-inductive
–10 V
20 V
430
W
100
W
–15 mA
0V
–11 V
V
GG
–V
DD
2N5115
–6 V
12 V
910
W
220
W
–7 mA
0V
–7 V
2N5116
–6 V
8V
2000
W
390
W
–3 mA
0V
–5 V
51
W
1.2 kW
Sampling
Scope
51
W
51
W
V
GS(L)
V
GS(H)
0.1
mF
1.2 kW
R
L
R
G
7.5 kW
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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