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2SA1825-R

产品描述Power Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, FLP-3
产品类别分立半导体    晶体管   
文件大小45KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

2SA1825-R概述

Power Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, FLP-3

2SA1825-R规格参数

参数名称属性值
Objectid1999663396
零件包装代码FLIP-CHIP
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)8 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型PNP
最大功率耗散 (Abs)1.5 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)130 MHz

2SA1825-R相似产品对比

2SA1825-R 2SA1825R 2SA1825T 2SA1825-T 2SC4729-R 2SC4729-S 2SC4729S 2SC4729-T 2SA1825-S
描述 Power Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, FLP-3 8A, 50V, PNP, Si, POWER TRANSISTOR, FLP-3 8A, 50V, PNP, Si, POWER TRANSISTOR, FLP-3 Power Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, FLP-3 8A, 50V, NPN, Si, POWER TRANSISTOR, FLP-3 8A, 50V, NPN, Si, POWER TRANSISTOR, FLP-3 8A, 50V, NPN, Si, POWER TRANSISTOR, FLP-3 Power Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FLP-3 8A, 50V, PNP, Si, POWER TRANSISTOR, FLP-3
Objectid 1999663396 1481977345 1481977361 1999663398 1481977616 1481977619 1481977619 1999663421 1481977351
零件包装代码 FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
针数 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
最大集电极电流 (IC) 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 100 100 200 200 100 140 140 200 140
JESD-30 代码 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
元件数量 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
极性/信道类型 PNP PNP PNP PNP NPN NPN NPN NPN PNP
最大功率耗散 (Abs) 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 130 MHz 130 MHz 130 MHz 130 MHz 180 MHz 180 MHz 180 MHz 180 MHz 130 MHz

 
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