CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±20V
I
D
= 3.4A, V
GS
= -10V, (Figure 9)
V
DD
= -50V, I
D
= 6.8A, R
L
= 7.1Ω,
V
GS
= -10V, R
GS
=18Ω
(Figures 13, 16, 17)
MIN
-100
-2.0
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to -10V
V
DD
= -80V,
I
D
= 5.6A,
R
L
= 14.3Ω
I
G(REF)
= 1.0mA
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
9.6
29
21
25
-
-
-
-
485
170
45
-
-
MAX
-
-4.0
-25
-250
±100
0.600
60
-
-
-
-
60
18
9
3
-
-
-
3.00
100
UNITS
V
V
µA
µA
nA
W
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source on Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate to Drain Charge
Gate to Source Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g
Q
gd
Q
gs
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
DS
= -25V, V
GS
= 0V, f = 1MHz
Source to Drain Diode Ratings and Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= -5.6A
I
SD
= -6.8A, dI
SD
/dt = -100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
130
0.70
MAX
-6.3
150
1.4
UNITS
V
ns
µC
4-84
IRFR9120, IRFU9120
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
Unless Otherwise Specified
-6
-5
-4
-3
-2
-1
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
THERMAL IMPEDANCE
Z
θJC
, TRANSIENT
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
10
-5
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
-30
100µs
I
DM
, PEAK CURRENT (A)
-10
2
V
GS
= -20V
I
D
, DRAIN CURRENT (A)
-10
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
150
–
T C
I
=
I 25
---------------------
-
125
-10
1
V
GS
= -10V
T
C
= 25
o
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-1
10ms
100ms
DC
T
C
= 25
o
C
T
J
= MAX RATED
-0.1
-1
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-100
t, PULSE WIDTH (ms)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
4-85
IRFR9120, IRFU9120
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
AS
, AVALANCHE CURRENT (A)
-14
-10
I
D
, DRAIN CURRENT (A)
E
AS
= 210mJ
CONDITIONS:
V
DD
= -25V, I
AS
= -5.6A,
L = 10mH, STARTING T
J
= 25
o
C
-12
V
GS
= -20V
-10
T
C
= 25
o
C
-8
V
GS
= -7V
-6
-4
-2
0
0
-2
-4
-6
-8
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= -4.5V
V
GS
= -6V
V
GS
= -5V
V
GS
= -10V
V
GS
= -8V
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
-1
0.01
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
-12
-55
o
C
25
o
C
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
DD
= -15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -3.4A
-9
2.0
-6
150
o
C
1.5
1.0
-3
0.5
0
-80
0
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V
GS
= V
DS
, I
D
= -250µA
NORMALIZED DRAIN TO SOURCE
2.0
I
D
= -250µA
BREAKDOWN VOLTAGE
THRESHOLD VOLTAGE
NORMALIZED GATE
1.5
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-86
IRFR9120, IRFU9120
Typical Performance Curves
600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
500
C, CAPACITANCE (pF)
400
300
C
OSS
200
100
0
0
-5
-10
-15
-20
-25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
RSS
V
GS
= 0V, f = 0.1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
Unless Otherwise Specified
(Continued)
-100
V
DD
=BV
DSS
V
DD
= BV
DSS
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
-80
-60
R
L
= 1.2Ω
I
G(REF)
= -1.0mA
V
GS
= -10V
0.75 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.25 BV
DSS
-6
-40
-4
-20
-2
0
20
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
