1,550nm MQW-DFB
Continous Wave Laser
FEATURES
• Continuous Wave (CW) MQW DFB Laser
• Built-in TEC, Thermistor and Monitor PD
• 14-Pin Butterfly Type Module
• 10mW Output Power
• Selected wavelengths according to ITU-T grid available
• Polarization preserving (PANDA) fiber
FLD5F6CX-H
APPLICATIONS
This MQW laser is intended for use in 2.5 and 10 Gb/s long haul
DWDM transmission systems.
DESCRIPTION
The Multiple Quantum Well (MQW) Laser has high power CW operation.
It is packaged in a “butterfly” type module. This module has high
optical coupling efficiency through an optical isolator. This module also includes a monitor
photodiode, a thermoelectric cooler (TEC) and thermistor. This laser is designed for use with
external modulation components (such as LiNb03 modulators).
NOTE
This device is not available with an axis aligned connector.
The Fujitsu connector is attached only for the convenience of measuring the
extinction ratio at incoming inspection of the customer. A fusion splice is the
recommended method for connecting this laser to an external modulator.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
Parameter
Storage Temperature
Operating Case Temperature
Optical Output Power
Laser Reverse Voltage
Laser Forward Current
Photodiode Reverse Voltage
Photodiode Forward Current
Cooler Current
Cooler Voltage
Lead Soldering Time
Symbol
Tstg
Top
Pf
VR
IF
VDR
IPF
Ic
Vc
Tsold
Condition
-
-
CW
-
CW
-
-
-
Note (1)
<260°C
Ratings
-40 to +70
-20 to +70
15
2
150
20
10
1.4
2.5
10
Unit
°C
°C
mW
V
mA
V
mA
A
V
sec
Note 1: Heatsink thickness shall be 10mm min. (refer to note on thermal precaution).
Edition 1.0
March 1999
1
FLD5F6CX-H
Parameter
Laser Set Temperature
Optical Output Power
Threshold Current
Forward Voltage
Slope Efficiency
Peak Wavelength
Wavelength Drift
Wavelength Stability with
Case Temperature
Spectral Width (-3dB)
Side Mode Suppression
Monitor Current
Monitor Dark Current
Monitor Capacitance
Tracking Error (Note 2)
Optical Isolation
Extinction Ratio
Relative Intensity Noise
Cooler Current
Cooler Voltage
Thermistor Resistance
Thermistor B Constant (Note 2)
Symbol
Tset
Pf
Ith
VF
η
λ
p
-
-
∆λ
Sr
Im
Idm
Ct
TE
S22
TE/TM
RIN
Ic
Vc
Rth
B
Conditions
-
1,550nm MQW-DFB
Continous Wave Laser
Limits
Typ.
-
-
-
-
0.16
Note (4)
-
-
-
30
0.04
-
-
-
25
20
-
-
-
6.3
3,270
-
-
8
33
-
-
-
-
-
-
-
-
-
-
3,450
0.2
+/-2
50
-
1.0
100
10
+/-0.5
-
-
-157
1.0
2.4
12.7
3,630
OPTICAL AND ELECTRICAL CHARACTERISTICS AT (TL=Tset, Tc=25°C, BOL, unless otherwise specified)
Min.
+20
10
3
-
0.09
Max.
+35
-
40
1.5
-
Unit
°C
mW
mA
V
mW/mA
nm
nm
pm/°C
MHz
dB
mA
nA
pF
dB
dB
dB
dB/Hz
A
V
kΩ
K
CW, Tc=-20 to +70°C
CW
CW, IF=30 mA, pin 3,13
CW, Pf=10mW,
ORL>40dB
CW, Pf=10mW,
ORL>40dB
after 20 years
-
CW, Pf=10mW,
ORL>40dB
CW, Pf=10mW,
ORL>40dB
Pf=10mW
VPD=5V
VPD=5V, f=1 MHz
Im=constant,
Pf(Tc=25°C)=10mW,
Tc=-20 to +70°C
Tc=-20 to +70°C
CW, Pf=10mW
CW, Pf=10mW,
ORL>40dB, f=0.5GHz
TL=Tset, Tc=+70°C,
Pf=10mW
TL
=
Tset, Tc=+70°C,
Pf=10mW
TL=+20 to +35°C
TL=+20 to +35°C
Note 2. TE=10*log[Pf(Tc)/Pf(25)]
Note 3. Relation between resistance and temperature (°K) is:
Rth (T) = Rth (25)*exp[B(1/T-1/298)]
Note 4. The selected wavelength is available which is listed in Figure 5.
Edition 1.0
March 1999
2
1,550nm MQW-DFB
Continous Wave Laser
Fig. 1 Forward Voltage vs Output Power
12
FLD5F6CX-H
Fig. 2 Temperature Dependance of
Wavelength
1554
Wavelength (nm)
1553
1552
1551
1550
10
Output Power, Pf (mW)
9
6
3
0
20
30
40
0
30
60
90
Laser Temperature, TL (°C)
Forward Current, If (mA)
Fig. 3 Cooler Voltage -Current
Fig.4 Spectrum
3.0
Relative Intensity (dB)
10
0
3.0
Cooler Voltage (V)
Cooler Current (A)
2.0
1.0
0.0
-1.0
Vc
Ic
2.0
1.0
0.0
-1.0
80
-10
-20
-30
-40
-50
-60
1545
1550
1555
0
10
20
30
40
50
60
70
Cooler Temperature (°C)
Wavelength
λ
(nm)
Edition 1.0
March 1999
3
FLD5F6CX-H
Fig. 5 Wavelength Table
Wavelength (nm)
(TL=Tset)
(in vacuum)
1527.99
1528.77
1529.55
1530.33
1531.12
1531.90
1532.68
1533.47
1534.25
1535.04
1535.82
1536.61
1537.40
1538.19
1538.98
1539.77
1540.56
1541.35
1542.14
1542.94
1543.73
1544.53
1,550nm MQW-DFB
Continous Wave Laser
Part Number
FLD5F6CX-H62
-H61
-H60
-H59
-H58
-H57
-H56
-H55
-H54
-H53
-H52
-H51
-H50
-H49
-H48
-H47
-H46
-H45
-H44
-H43
-H42
-H41
Tolerance (nm)
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
-H40
-H39
-H38
-H37
-H36
-H35
-H34
-H33
-H32
-H31
-H30
-H29
-H28
-H27
-H26
-H25
-H24
-H23
-H22
-H21
-H20
-H19
-H18
1545.32
1546.12
1546.92
1547.72
1548.51
1549.32
1550.12
1550.92
1551.72
1552.52
1553.33
1554.13
1554.94
1555.75
1556.55
1557.36
1558.17
1558.98
1559.79
1560.61
1561.42
1562.23
1563.05
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
4
Edition 1.0
March 1999
1,550nm MQW-DFB
Continous Wave Laser
“CX” PACKAGE
17.24
15.24
2.54
14-0.5
PIN 1
FLD5F6CX-H
UNIT: mm
TOP VIEW
PIN 7
All dimensions are
in millimeters.
TH
10 K
Ω
TEC
14.6
φ5.2
8.89
12.7
15.2
φ0.9
11.6
(Preliminary)
4-φ2.67
PIN 8
20.83
22.0
26.04
29.97
0.5
1.70
5.41
0.5
1.70
4.15
5.47
5.47
8.17
PIN #
FUNCTION
PIN 14
* Pigtail length (L) shall
be specified in the detail
(individual) specification,
if it is special.
L=1500 min. for standard
*L
23
13
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Temperature Monitor
Temperature Monitor
Laser DC Bias (-)
Monitor (Anode)
Monitor (Cathode)
TEHP (+)
TEHP (-)
Case Ground
Case Ground
N.C.
Laser Ground
Laser Modulation (-)
Case Ground
N.C.
Po
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
55 Schanck Road,
Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
www.fcsi.fujitsu.com
FUJITSU MIIKROELCTRONIK GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan
2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Phone: 3-5322-3356
FAX: 3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
Edition 1.0
March 1999
5
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