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CAT28C513N-15T: 产品描述EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32; 产品类别存储存储; 文件大小97KB，共10页; 制造商Catalyst; 官网地址http://www.catalyst-semiconductor.com/

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CAT28C513N-15T概述

EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32

CAT28C513N-15T规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Catalyst
零件包装代码	QFJ
包装说明	QCCJ, LDCC32,.5X.6
针数	32
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	150 ns
其他特性	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS
命令用户界面	NO
数据轮询	YES
数据保留时间-最小值	100
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PQCC-J32
JESD-609代码	e0
长度	13.97 mm
内存密度	524288 bit
内存集成电路类型	EEPROM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	32
字数	65536 words
字数代码	64000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64KX8
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装等效代码	LDCC32,.5X.6
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
页面大小	128 words
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
电源	5 V
编程电压	5 V
认证状态	Not Qualified
座面最大高度	3.55 mm
最大待机电流	0.0002 A
最大压摆率	0.05 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
切换位	YES
宽度	11.43 mm
最长写入周期时间 (tWC)	5 ms

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Advanced

CAT28C512/513

512K-Bit CMOS PARALLEL E

PROM

FEATURES

Fast Read Access Times: 120/150 ns

Low Power CMOS Dissipation:

Automatic Page Write Operation:

–Active: 50 mA Max.

–Standby: 200

A Max.

Simple Write Operation:

–1 to 128 Bytes in 5ms

–Page Load Timer

End of Write Detection:

–On-Chip Address and Data Latches

–Self-Timed Write Cycle with Auto-Clear

Fast Write Cycle Time:

–Toggle Bit

–DATA Polling

DATA

Hardware and Software Write Protection

100,000 Program/Erase Cycles

100 Year Data Retention

Commercial, Industrial and Automotive

–5ms Max

CMOS and TTL Compatible I/O

Temperature Ranges

DESCRIPTION

The CAT28C512/513 is a fast,low power, 5V-only CMOS

parallel E

PROM organized as 64K x 8-bits. It requires

a simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C512/513 features hardware and software write

protection.

The CAT28C512/513 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC

approved 32-pin DIP, PLCC, 32-pin TSOP and 40-pin

TSOP packages.

BLOCK DIAGRAM

A7–A15

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

65,536 x 8

PROM

ARRAY

128 BYTE PAGE

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

5096 FHD F02

I/O0–I/O7

A0–A6

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. 25074-00 2/98

CAT28C513N-15T相似产品对比

	CAT28C513N-15T	CAT28C513HNI-15T	CAT28C513HN-15T	CAT28C513HNI-12T	CAT28C513HNA-12T	CAT28C513HN-12T	CAT28C513HNA-15T
描述	EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32	EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32	EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32	EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32	EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32	EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32	EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Catalyst	Catalyst	Catalyst	Catalyst	Catalyst	Catalyst	Catalyst
零件包装代码	QFJ	QFJ	QFJ	QFJ	QFJ	QFJ	QFJ
包装说明	QCCJ, LDCC32,.5X.6	QCCJ,	QCCJ,	QCCJ,	QCCJ,	QCCJ,	QCCJ,
针数	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	150 ns	150 ns	150 ns	120 ns	120 ns	120 ns	150 ns
其他特性	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS
数据保留时间-最小值	100	100	100	100	100	100	100
JESD-30 代码	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
长度	13.97 mm	13.97 mm	13.97 mm	13.97 mm	13.97 mm	13.97 mm	13.97 mm
内存密度	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
内存集成电路类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
内存宽度	8	8	8	8	8	8	8
湿度敏感等级	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32
字数	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
字数代码	64000	64000	64000	64000	64000	64000	64000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	85 °C	105 °C	70 °C	105 °C
最低工作温度	-	-40 °C	-	-40 °C	-40 °C	-	-40 °C
组织	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	240	240	240	240	240	240
编程电压	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.55 mm	3.55 mm	3.55 mm	3.55 mm	3.55 mm	3.55 mm	3.55 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	30	30	30	30	30
宽度	11.43 mm	11.43 mm	11.43 mm	11.43 mm	11.43 mm	11.43 mm	11.43 mm
Base Number Matches	-	1	1	1	1	1	1

CAT28C513N-15T

CAT28C513N-15T概述

CAT28C513N-15T规格参数

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CAT28C513N-15T相似产品对比

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