Power Transistor Arrays
PUA3124
(PU3124)
Silicon NPN triple diffusion planar type darlington
For power amplification
■
Features
•
Built-in zener diode (60 V) between collector and base
•
Small variation in withstand pressure
•
Large energy handling capability
•
High-speed switching
•
NPN 3 elements
9.5
±0.2
1.65
±0.2
8.0
±0.2
20.2
±0.3
Unit: mm
4.0
±0.2
0.8
±0.25
Solder Dip
5.3
±0.5
4.4
±0.5
0.5
±0.15
1.0
±0.25
2.54
±0.2
7
×
2.57 = 17.78
±0.25
C 1.5
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
60±10
60±10
5
4
8
15
2.4
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
0.5
±0.15
1: Emitter
2: Base
3: Collector
1 2 3 4 5 6 7 8
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *1
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b
Conditions
I
C
=
5 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
*2
I
C
=
3 A, I
B
=
12 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A
I
B1
=
12 mA, I
B2
= −12
mA
V
CC
=
50 V
I
C
=
1 A, L
=
100 mH, R
BE
=
100
Ω
50
20
0.3
3.0
1.0
1 000
1 000
10 000
2.0
4.0
2.5
V
MHz
µs
µs
µs
mJ
V
Min
50
Typ
Max
70
100
2
Unit
V
µA
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: E
s/b
test circuit
X
Mercury relay
Rank
Free
P
Q
L
h
FE
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Y
R
BE
Z
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJK00014AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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