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2SB1203R

产品描述Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
产品类别分立半导体    晶体管   
文件大小135KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

2SB1203R概述

Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

2SB1203R规格参数

参数名称属性值
Objectid1481158687
包装说明IN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN代码EAR99
YTEOL0
外壳连接COLLECTOR
最大集电极电流 (IC)5 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型PNP
最大功率耗散 (Abs)20 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)130 MHz

2SB1203R相似产品对比

2SB1203R 2SB1203S 2SB1203TL 2SB1203T 2SD1803TL 2SD1803Q 2SD1803S 2SB1203Q
描述 Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Objectid 1481158687 1481158690 1481158963 1481158693 1481158981 1481158900 1481158906 1481158684
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 5 A 5 A 5 A 5 A 5 A 5 A 5 A 5 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 100 140 35 200 35 70 140 70
JESD-30 代码 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 2 3 2 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE IN-LINE
极性/信道类型 PNP PNP PNP PNP NPN NPN NPN PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO YES NO YES NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 130 MHz 130 MHz 130 MHz 130 MHz 180 MHz 180 MHz 180 MHz 130 MHz
最大功率耗散 (Abs) 20 W 20 W - 20 W - 20 W 20 W 20 W

 
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