PN100 / MMBT100 / PN100A / MMBT100A
PN100
PN100A
MMBT100
MMBT100A
C
E
C
B
TO-92
E
SOT-23
Mark: NA / NA1
B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
45
75
6.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Characteristic
PN100
PN100A
625
5.0
83.3
200
Max
*MMBT100
*MMBT100A
350
2.8
357
Units
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1998 Fairchild Semiconductor Corporation
PN100 / MMBT100 / PN100A / MMBT100A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10
µA,
I
B
= 0
I
C
= 1 mA, I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 60 V
V
CE
= 40 V
V
EB
= 4 V
75
45
6.0
50
50
50
V
V
V
nA
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V*
I
C
= 150 mA, V
CE
= 5.0 V*
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
450
600
350
0.2
0.4
0.85
1.0
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
V
CE
= 20 V, I
C
= 20 mA
V
CB
= 5.0 V, f = 1.0 MHz
I
C
= 100
µA,
V
CE
= 5.0 V,
R
G
= 2.0 kΩ, f = 1.0 kHz
100
100A
250
4.5
5.0
4.0
MHz
pF
dB
dB
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
Vce = 5V
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
25 °C
300
25 °C
200
- 40 °C
0.2
100
0.1
125 °C
- 40 °C
0
10
20 30
50
100
200 300
I
C
- COLLECTOR CURRENT (mA)
500
1
10
100
I
C
- COLLECTOR CURRENT (mA)
400
PN100 / MMBT100 / PN100A / MMBT100A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
0.8
0.6
0.4
0.2
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
300
- 40 °C
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
V
CE
= 5V
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
- 40 °C
25 °C
125 °C
25 °C
125 °C
β
= 10
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 60V
Input and Output Capacitance
vs Reverse Voltage
100
f = 1.0 MHz
CAPACITANCE (pF)
10
Cib
Cob
1
1
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
0.1
0.1
1
10
V
ce
- COLLECTOR VOLTAGE (V)
100
Switching Times vs
Collector Current
300
270
240
210
TIME (nS)
180
150
120
90
60
30
0
10
td
tf
tr
IB1 = IB2 = Ic / 10
V
cc
= 10 V
Power Dissipation vs
Ambient Temperature
700
ts
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TO-92
20
30
50
100
200
I
C
- COLLECTOR CURRENT (mA)
300
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration:
Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
HTB:B
QTY:
10000
See Fig 2.0 for various
Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV:
QA REV:
B2
FSCINT
Label
(FSCINT)
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
375mm x 267mm x 375mm
Intermediate Box
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2000
SPEC:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Reel
Style
A
E
Ammo
M
P
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
FSCINT
Label
327mm x 158mm x 135mm
Immediate Box
Customized
Label
5 Ammo boxes per
Intermediate Box
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
Customized
Label
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
TO-92 STANDARD
STRAIGHT
LEADCLIP
DIMENSION
NO LEAD CLIP
NO LEAD CLIP
NO LEADCLIP
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Label
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
©2000 Fairchild Semiconductor International
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style
Configuration:
Figure 2.0
Machine Option “A” (H)
Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging
Configuration:
Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
stm32/stm8
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