ASAT20
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI ASAT20
is Designed for
Genral Purpose Class C Operation up
to 1.7 GHz.
PACKAGE STYLE .250 2L FLG(A)
.020 x 45°
A
Ø .130 NOM.
.050 x 45°
FEATURES:
•
Internal Input Matching Network
•
P
G
= 8.0 dB at 20 W/1.7 GHz
•
Omnigold™
Metalization System /
Nitride Passivation
•
Common Base Class C
DIM
D C
L
B
M
F
E
G
H
I
J
K
MINIMUM
inches / mm
MAXIMUM
inches / mm
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
3.2 A
50 V
28 V
3.5 V
40 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
4.0 °C/W
A
B
C
D
E
F
G
H
I
J
K
L
M
.055 / 1.40
.124 / 3.15
.243 / 6.17
.635 / 16.13
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 / 1.91
.065 / 1.65
.253 / 6.43
.665 / 16.89
.565 / 14.35
.749 / 19.02
.325 / 8.26
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.245 / 6.22
.092 / 2.34
.255 / 6.48
ORDER CODE: ASI10519
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
h
FE
C
OB
P
G
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 5.0 mA
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
I
C
= 3.2 A
P
OUT
= 20 W
I
C
= 800 mA
f = 1.0 MHz
f = 1.40 GHz
MINIMUM TYPICAL MAXIMUM
45
12
3.0
10
24
7.6
8.0
8.2
50
100
UNITS
V
V
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/3
ERROR! REFERENCE SOURCE NOT FOUND.
ASAT20
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
2/3
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