Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Vishay(威世) |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 最大漏极电流 (Abs) (ID) | 6 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 2 W |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| SI9926DY-E3 | SI9926DY-T1 | SI9926DY-T1-E3 | |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 |
| 厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) |
| 包装说明 | , | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown | unknown | unknown |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 表面贴装 | YES | YES | YES |
| JESD-609代码 | e3 | e0 | - |
| 端子面层 | Matte Tin (Sn) | TIN LEAD | - |
| 零件包装代码 | - | SOT | SOT |
| 针数 | - | 8 | 8 |
| ECCN代码 | - | EAR99 | EAR99 |
| 配置 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 20 V | 20 V |
| 最大漏极电流 (ID) | - | 6 A | 6 A |
| 最大漏源导通电阻 | - | 0.03 Ω | 0.03 Ω |
| JESD-30 代码 | - | R-PDSO-G8 | R-PDSO-G8 |
| 元件数量 | - | 2 | 2 |
| 端子数量 | - | 8 | 8 |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | SMALL OUTLINE | SMALL OUTLINE |
| 最大脉冲漏极电流 (IDM) | - | 20 A | 20 A |
| 认证状态 | - | Not Qualified | Not Qualified |
| 端子形式 | - | GULL WING | GULL WING |
| 端子位置 | - | DUAL | DUAL |
| 晶体管元件材料 | - | SILICON | SILICON |
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