Maximum Power Dissipation (Each Transistor, Note 3) . . . . . 200mW
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . .-65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3096 is isolated from the substrate by an integral diode. The substrate (Terminal 16) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Electrical Specifications
For Equipment Design, At T
A
= 25
o
C
CA3096
MIN
TYP
MAX
MIN
CA3096A
TYP
MAX
MIN
CA3096C
TYP
MAX
UNITS
PARAMETER
TEST
CONDITIONS
DC CHARACTERISTICS FOR EACH NPN TRANSISTOR
I
CBO
I
CEO
V
(BR)CEO
V
(BR)CBO
V
(BR)CIO
V
(BR)EBO
V
Z
V
CE SAT
V
BE
(Note 4)
h
FE
(Note 4)
|∆V
BE
/∆T| (Note 4)
V
CB
= 10V,
I
E
= 0
V
CE
= 10V,
I
B
= 0
I
C
= 1mA, I
B
= 0
I
C
= 10µA,
I
E
= 0
I
CI
= 10µA,
I
B
= I
E
= 0
I
E
= 10µA,
I
C
= 0
I
Z
= 10µA
l
C
= 10mA,
I
B
= 1mA
I
C
= 1mA,
V
CE
= 5V
I
C
= 1mA,
V
CE
= 5V
-
-
35
45
45
6
6
-
0.6
150
-
0.001
0.006
50
100
100
8
7.9
0.24
0.69
390
1.9
100
1000
-
-
-
-
9.8
0.7
0.78
500
-
-
-
35
45
45
6
6
-
0.6
150
-
0.001
0.006
50
100
100
8
7.9
0.24
0.69
390
1.9
40
100
-
-
-
-
9.8
0.5
0.78
500
-
-
-
24
30
30
6
6
-
0.6
100
-
0.001
0.006
35
80
80
8
7.9
0.24
0.69
390
1.9
100
1000
-
-
-
-
9.8
0.7
0.78
670
-
mV/
o
C
nA
nA
V
V
V
V
V
V
V
DC CHARACTERISTICS FOR EACH PNP TRANSISTOR
I
CBO
V
CB
= -10V,
I
E
= 0
-
-0.06
-100
-
-0.006
-40
-
-0.06
-100
nA
2
CA3096, CA3096A, CA3096C
Electrical Specifications
For Equipment Design, At T
A
= 25
o
C
(Continued)
CA3096
MIN
-
-40
-40
-40
40
-
-0.5
40
20
-
TYP
-0.12
-75
-80
-100
100
-0.16
-0.6
85
47
2.2
MAX
-1000
-
-
-
-
-0.4
-0.7
250
200
-
MIN
-
-40
-40
-40
40
-
-0.5
40
20
-
V
Z
V
CE SAT
V
BE
h
FE
CA3096A
TYP
-0.12
-75
-80
-100
100
-0.16
-0.6
85
47
2.2
MAX
-100
-
-
-
-
-0.4
-0.7
250
200
-
MIN
-
-24
-24
-24
24
-
-0.5
30
15
-
CA3096C
TYP
-0.12
-30
-60
-80
80
-0.16
-0.6
85
47
2.2
MAX
-1000
-
-
-
-
-0.4
-0.7
300
200
-
mV/
o
C
UNITS
nA
V
V
V
V
V
V
PARAMETER
I
CEO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
(BR)ElO
V
CE SAT
V
BE
(Note 4)
h
FE
(Note 4)
TEST
CONDITIONS
V
CE
= -10V,
I
B
= 0
I
C
= -100µA,
I
B
= 0
I
C
= -10µA,
I
E
= 0
I
E
= -10µA,
I
C
= 0
I
EI
= 10µA,
I
B
= I
C
= 0
I
C
= -1mA,
I
B
= -100µA
I
C
= -100µA,
V
CE
= -5V
I
C
= -100µA,
V
CE
= -5V
I
C
= -1mA,
V
CE
= -5V
|∆V
BE
/∆T| (Note 4)
I
CBO
I
CEO
I
C
= -100µA,
V
CE
= -5V
Collector-Cutoff Current
Collector-Cutoff Current
Emitter-to-Base Zener Voltage
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
DC Forward-Current Transfer Ratio
V
(BR)CEO
Collector-to-Emitter Breakdown Voltage
V
(BR)CBO
Collector-to-Base Breakdown Voltage
V
(BR)CIO
Collector-to-Substrate Breakdown Voltage
V
(BR)EBO
Emitter-to-Base Breakdown Voltage
NOTE:
4. Actual forcing current is via the emitter for this test.
|∆V
BE
/∆T| Magnitude of Temperature Coefficient:
(for each transistor)
Electrical Specifications
For Equipment Design At T
A
= 25
o
C (CA3096A Only)
CA3096A
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
FOR TRANSISTORS Q
1
AND Q
2
(AS A DIFFERENTIAL AMPLIFIER)
Absolute Input Offset Voltage
Absolute Input Offset Current
Absolute Input Offset Voltage
Temperature Coefficient
|VIO|
|I
IO
|
∆V
IO
-----------------
-
∆T
V
CE
= 5V, I
C
= 1mA
-
-
-
0.3
0.07
1.1
5
0.6
-
mV
µA
µV/
o
C
FOR TRANSISTORS Q
4
AND Q
5
(AS A DIFFERENTIAL AMPLIFIER)
Absolute Input Offset Voltage
Absolute Input Offset Current
Absolute Input Offset Voltage
Temperature Coefficient
|V
IO
|
|I
IO
|
∆V
IO
-----------------
-
∆T
V
CE
= -5V, I
C
= -100µA
R
S
= 0
-
-
-
0.15
2
0.54
5
250
-
mV
nA
µV/
o
C
3
CA3096, CA3096A, CA3096C
Electrical Specifications
PARAMETER
Typical Values Intended Only for Design Guidance At T
A
= 25
o
C
TYPICAL
VALUES
SYMBOL
TEST CONDITIONS
UNITS
DYNAMIC CHARACTERISTICS FOR EACH NPN TRANSISTOR
Noise Figure (Low Frequency)
Low-Frequency, Input Resistance
Low-Frequency Output Resistance
Admittance Characteristics
Forward Transfer Admittance
y
FE
Input Admittance
y
IE
Output Admittance
y
OE
Gain-Bandwidth Product
f
T
g
FE
b
FE
g
IE
b
IE
g
OE
b
OE
f = 1MHz, V
CE
= 5V, I
C
= 1mA
f = 1MHz, V
CE
= 5V, I
C
= 1mA
f = 1MHz, V
CE
= 5V, I
C
= 1mA
f = 1MHz, V
CE
= 5V, I
C
= 1mA
f = 1MHz, V
CE
= 5V, I
C
= 1mA
f = 1MHz, V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 1.0mA
V
CE
= 5V, I
C
= 5mA
Emitter-To-Base Capacitance
Collector-To-Base Capacitance
Collector-To-Substrate Capacitance
C
EB
C
CB
C
CI
V
EB
= 3V
V
CB
= 3V
V
CI
= 3V
7.5
-j13
2.2
j3.1
0.76
j2.4
280
335
0.75
0.46
3.2
mS
mS
mS
mS
mS
mS
MHz
MHz
pF
pF
pF
NF
R
I
R
O
f = 1kHz, V
CE
= 5V, I
C
= 1mA, R
S
= 1kΩ
f = 1.0kHz, V
CE
= 5V I
C
= 1 mA
f = 1.0kHz, V
CE
= 5V I
C
= 1 mA
2.2
10
80
dB
kΩ
kΩ
DYNAMIC CHARACTERISTICS FOR EACH PNP TRANSISTOR
Noise Figure (Low Frequency)
Low-Frequency Input Resistance
Low-Frequency Output Resistance
Gain-Bandwidth Product
Emitter-To-Base Capacitance
Collector-To-Base Capacitance
Base-To-Substrate Capacitance
NF
R
I
R
O
f
T
C
EB
C
CB
C
BI
f = 1kHz, I
C
= 100µA, R
S
= 1kΩ
f = 1kHz, V
CE
= 5V, I
C
= 100µA
f = 1kHz, V
CE
= 5V, I
C
= 100µA
V
CE
= 5V, I
C
= 100µA
V
EB
= -3V
V
CB
= -3V
V
BI
= 3V
3
27
680
6.8
0.85
2.25
3.05
dB
kΩ
kΩ
MHz
pF
pF
pF
Typical Applications
(SUBSTRATE)
2
f
1
500Ω
0.1µF
3
1kΩ
V+ = 10V
13
1kΩ
0.1µF
f
2
500Ω
5
4
NOTE: F
1
OR F
2
< 10kHz
6
Q
2
7
44003
8
0
-20
-10
f
2
- f
1
> 0
0
f
1
= f
2
10
f
1
- f
2
> 0
20
9
OUTPUT
1
15
14
Q
5
11
3kΩ
10
Q
4
OUTPUT VOLTAGE (V)
1
3kΩ
12
1µF
16
9
CENTER FREQUENCY: 1kHz
8
7
6
5
4
3
2
FREQUENCY DEVIATION (kHz)
FIGURE 1. FREQUENCY COMPARATOR USING CA3096
FIGURE 2. FREQUENCY COMPARATOR CHARACTERISTICS
4
CA3096, CA3096A, CA3096C
Typical Applications
(Continued)
3
NTC
SENSOR
2
+
120V
AC
1
R
P
6.8kΩ
2W
7
Q
3
8
9
16
5.1kΩ
Q
1
100µF
12V
-
11
Q
4
12
10
10kΩ
13
Q
5
15
5
10kΩ
14
6
Q
2
4
10kΩ
5.1kΩ
1kΩ
G
MT
1
T2300B
MT
2
LOAD
FIGURE 3. LINE-OPERATED LEVEL SWITCH USING CA3096A OR CA3096
+6V
13
Q
5
14
40841
MOSFET
20kΩ
5kΩ
5kΩ
OUTPUT
15
11
10
Q
4
12
1kΩ
1
Q
1
Q
2
2
50MΩ
5µF
4
5
3
6
20kΩ
8
7
3.9kΩ
10kΩ
9
Q
3
1kΩ
TIME DELAY CHANGES
±7%
FOR SUPPLY VOLTAGE CHANGE OF
±10%
16
FIGURE 4. ONE-MINUTE TIMER USING CA3096A AND A MOSFET
V+
36
-
V T
=
±
--------------
IO RL
IF I
O
= 1mA AND R
L
= 1kΩ
V
T
=
±
36mV
1kΩ
12
10
Q
4
11
15
14
3
V
IN
100Ω
1kΩ
8
Q
3
7
V-
1
Q
1
2
9
I
O
1kΩ
4
Q
5
13
6
Q
2
100Ω
5
E
O
0
t
2kΩ
R
L
1kΩ
E
O
+V
T
V
IN
-V
T
t
FIGURE 5. CA3096A SMALL-SIGNAL ZERO VOLTAGE DETECTOR HAVING NOISE IMMUNITY
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