RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MO-001AB
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Harris |
| 包装说明 | IN-LINE, R-GDIP-T14 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 0.05 A |
| 集电极-发射极最大电压 | 15 V |
| 配置 | COMPLEX |
| 最小直流电流增益 (hFE) | 40 |
| 最高频带 | VERY HIGH FREQUENCY BAND |
| JEDEC-95代码 | MO-001AB |
| JESD-30 代码 | R-GDIP-T14 |
| JESD-609代码 | e0 |
| 元件数量 | 5 |
| 端子数量 | 14 |
| 最高工作温度 | 125 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 550 MHz |
| CA3086F | CA3086M96 | CA3086M | |
|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MO-001AB | RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AB, MS-012AB, 14 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AB, MS-012AB, 14 PIN |
| 厂商名称 | Harris | Harris | Harris |
| 包装说明 | IN-LINE, R-GDIP-T14 | SMALL OUTLINE, R-PDSO-G14 | SMALL OUTLINE, R-PDSO-G14 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 0.05 A | 0.05 A | 0.05 A |
| 集电极-发射极最大电压 | 15 V | 15 V | 15 V |
| 配置 | COMPLEX | COMPLEX | COMPLEX |
| 最高频带 | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JEDEC-95代码 | MO-001AB | MS-012AB | MS-012AB |
| JESD-30 代码 | R-GDIP-T14 | R-PDSO-G14 | R-PDSO-G14 |
| 元件数量 | 5 | 5 | 5 |
| 端子数量 | 14 | 14 | 14 |
| 封装主体材料 | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | YES | YES |
| 端子形式 | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 550 MHz | 550 MHz | 550 MHz |
| 是否Rohs认证 | 不符合 | - | 不符合 |
| JESD-609代码 | e0 | - | e0 |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
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