CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC)
ground. A suitable bypass capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
T
A
= 25
o
C, For Equipment Design
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)ClO
V
(BR)EBO
I
CBO
I
CEO
h
FE
TEST CONDITIONS
l
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 10µA, I
CI
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 10V, I
E
= 0,
V
CE
= 10V, I
B
= 0,
V
CE
= 3V, I
C
= 1mA
MIN
20
15
20
5
-
-
40
TYP
60
24
60
7
0.002
(Figure 2)
100
MAX
-
-
-
-
100
5
-
UNITS
V
V
V
V
nA
µA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-Cutoff Current (Figure 1)
Collector-Cutoff Current (Figure 2)
DC Forward-Current Transfer Ratio (Figure 3)
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Typical Values Intended Only for Design Guidance
TYPICAL
VALUES
100
54
0.715
0.800
-1.9
0.23
V
V
mV/
o
C
V
SYMBOL
h
FE
V
CE
= 3V
TEST CONDITIONS
I
C
= 10mA
I
C
= 10µA
UNITS
DC Forward-Current Transfer Ratio
(Figure 3)
Base-to-Emitter Voltage (Figure 4)
V
BE
V
CE
= 3V
I
E
= 1 mA
I
E
= 10mA
V
BE
Temperature Coefficient (Figure 5)
Collector-to-Emitter
Saturation Voltage
Noise Figure (Low Frequency)
∆V
BE
/∆T
V
CE SAT
NF
V
CE
= 3V, l
C
= 1 mA
I
B
= 1mA, I
C
= 10mA
f = 1kHz, V
CE
= 3V, I
C
= 100µA,
R
S
= 1kΩ
3.25
dB
5-28
CA3086
Electrical Specifications
PARAMETER
Low-Frequency, Small-Signal Equivalent-
Circuit Characteristics:
Forward Current-Transfer Ratio
(Figure 6)
Short-Circuit Input Impedance
(Figure 6)
Open-Circuit Output Impedance
(Figure 6)
Open-Circuit Reverse-Voltage
Transfer Ratio (Figure 6)
Admittance Characteristics:
Forward Transfer Admittance
(Figure 7)
Input Admittance (Figure 8)
Output Admittance (Figure 9)
Reverse Transfer Admittance
(Figure 10)
Gain-Bandwidth Product (Figure 11)
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
y
FE
y
IE
y
OE
y
RE
f
T
C
EBO
C
CBO
C
ClO
V
CE
= 3V, I
C
= 3mA
V
EB
= 3V, I
E
= 0
V
CB
= 3V, I
C
= 0
V
C l
= 3V, I
C
= 0
h
FE
h
IE
h
OE
h
RE
f = 1MHz,V
CE
= 3V, l
C
= 1mA
31 - j1.5
mS
T
A
= 25
o
C, Typical Values Intended Only for Design Guidance
(Continued)
TYPICAL
VALUES
SYMBOL
TEST CONDITIONS
f = 1kHz,V
CE
= 3V, I
C
= 1mA
UNITS
100
-
3.5
kΩ
µS
-
15.6
1.8 X 10
-4
0.3 + j0.04
0.001 + j0.03
See Figure 10
mS
mS
-
550
0.6
0.58
2.8
MHz
pF
pF
pF
Typical Performance Curves
10
2
COLLECTOR CUTOFF CURRENT (nA)
COLLECTOR CUTOFF CURRENT (nA)
I
E
= 0
10
V
CB
= 15V
V
CB
= 10V
V
CB
= 5V
10
3
10
2
V
CE
= 10V
10
V
CE
= 5V
1
10
-1
10
-2
10
-3
0
25
50
75
100
125
0
25
TEMPERATURE (
o
C)
50
75
TEMPERATURE (
o
C)
100
125
I
B
= 0
1
10
-1
10
-2
10
-3
10
-4
FIGURE 1. I
CBO
vs TEMPERATURE
FIGURE 2. I
CEO
vs TEMPERATURE
5-29
CA3086
Typical Performance Curves
120
110
100
90
80
70
60
50
0.01
0.1
1
10
EMITTER CURRENT (mA)
BASE-TO-EMITTER VOLTAGE (V)
V
CE
= 3V
T
A
= 25
o
C
h
FE
(Continued)
0.8
V
CE
= 3V
T
A
= 25
o
C
STATIC FORWARD CURRENT
TRANSFER RATIO (h
FE
)
0.7
V
BE
0.6
0.5
0.4
0.01
0.1
1.0
EMITTER CURRENT (mA)
10
FIGURE 3. h
FE
vs I
E
FIGURE 4. V
BE
vs I
E
V
CB
= 3V
NORMALIZED h PARAMETERS
100
V
CE
= 3V
f = 1kHz
T
A
= 25
o
C
h
IE
BASE-TO-EMITTER VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
I
E
= 3mA
I
E
= 1mA
I
E
= 0.5mA
10
h
FE
= 100
h
IE
= 3.5kΩ
h
RE
= 1.88 x 10
-4
h
OE
= 15.6µS
h
OE
AT
1mA
h
RE
1.0
h
FE
h
RE
h
IE
0.1
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
10
FIGURE 5. V
BE
vs TEMPERATURE
FIGURE 6. NORMALIZED h
FE
, h
IE
, h
RE
, h
OE
vs I
C
FORWARD TRANSFER CONDUCTANCE (g
FE
)
AND SUSCEPTANCE (b
FE
) (mS)
INPUT CONDUCTANCE (g
IE
)
AND SUSCEPTANCE (b
IE
) (mS)
40
30
20
10
0
-10
-20
COMMON EMITTER CIRCUIT, BASE INPUT
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
6
5
4
3
COMMON EMITTER CIRCUIT, BASE INPUT
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
g
FE
b
IE
2
g
IE
1
0
b
FE
0.1
1
10
FREQUENCY (MHz)
100
0.1
1
10
FREQUENCY (MHz)
100
FIGURE 7. y
FE
vs FREQUENCY
FIGURE 8. y
IE
vs FREQUENCY
5-30
CA3086
Typical Performance Curves
(Continued)
6
OUTPUT CONDUCTANCE (g
OE
)
AND SUSCEPTANCE (b
OE
) (mS)
5
4
COMMON EMITTER CIRCUIT, BASE INPUT
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
REVERSE TRANSFER CONDUCTANCE (g
RE
)
AND SUSCEPTANCE (b
RE
) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
g
RE
IS SMALL AT FREQUENCIES
LESS THAN 500MHz
b
RE
0
b
OE
3
2
1
0
0.1
1
10
FREQUENCY (MHz)
100
-0.5
-1.0
-1.5
-2.0
1
10
FREQUENCY (MHz)
100
g
OE
FIGURE 9. y
OE
vs FREQUENCY
FIGURE 10. y
RE
vs FREQUENCY
V
CE
= 3V
GAIN BANDWIDTH PRODUCT (MHz)
1000
900
800
700
600
500
400
300
200
100
0
0
1
2
3
4
5
6
7
8
9
10
COLLECTOR CURRENT (mA)
T
A
= 25
o
C
FIGURE 11. f
T
vs I
C
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
#include "msp430g2231.h"
#define PWM BIT6
int main( void )
{
unsigned int i;
unsigned char flag;
flag = 1;
i = 0;
// Stop watchdog timer to prevent time out r ......
微控制器 MCU
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