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CA3086

产品描述5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-001-AA, MS-001AA, 14 PIN
产品类别分立半导体    晶体管   
文件大小31KB,共1页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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CA3086概述

5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-001-AA, MS-001AA, 14 PIN

CA3086规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Renesas(瑞萨电子)
零件包装代码DIP
包装说明DIP-14
针数14
Reach Compliance Codenot_compliant
ECCN代码EAR99
Samacsys DescriptionTransistor, Bipolar, NPN, CA3086
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压15 V
配置COMPLEX
最高频带VERY HIGH FREQUENCY BAND
JEDEC-95代码MS-001AA
JESD-30 代码R-PDIP-T14
JESD-609代码e0
元件数量5
端子数量14
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)550 MHz

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Intersil
Drivers, Buffers, Op-Amps and Arrays
Full Bridge MOSFET Drivers
Mfr.Õs
Type
HIP4080AIP
HIP4081AIP
HIP4082IP
Description
FET Driver with Comparator, Under Voltage, for Class D Amps,Voice Coils, and Motor Control
FET Driver with Under Voltage, High Performance for DC-DC Converters, UPS and Motor Control
FET Driver with Under Voltage Independent FET Control
Peak Output
Current
Each Drive
2.50 A
2.50 A
1.25 A
Supply Voltage
Bias/Bus
(V)
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
No Load Maint.
Supply Current
(mA)
18.5
16.5
6.5
Temperature
Range
(¡C)
Ð40 to +85
Ð40 to +85
Ð40 to +85
Package
Type
20 Lead PDI
20 Lead PDI
16 Lead PDI
High Performance Buffers
Single
Mfr.Õs
Type
PDIP
HFA1112IP
HA3-5033-5
HA3-5002-5
SOIC
Ñ
Ñ
HA9P5002-5
850 MHz Programmable Gain (+2, ±1)
250 MHz Video Buffer
110 MHz High Output Current
Description
Ð3 dB
Bandwidth @
Min. Acl
(MHz)
850
250
110
Slew
Rate
(V/µs)
2050
1100
1300
Settling
Time
(ns to %)
11-0.10
50-0.10
50-0.10
Input
Offset
Voltage
(mV)
8
5
5
Bias
Current
(µA)
25.0
20.0
2.0
Output
Current
(mA/Amp)
60
100
220
Supply
Range
(±V
DC
)
4.5 to 5.5
5.0 to 16.0
6.0 to 16.0
Supply
Current
(mA/Amp)
21.0
21.0
8.3
General Purpose Op-Amps
Single
Mfr.Õs
Type
DIP
CA3130AE
CA3130E
CA3140AE
CA3140E
HA7-2645-5
CA3160E
CA3080E
CA741E
HA3-2525-5
BiMOS Op-Amp with MOSFET Input/CMOS Output
BiMOS Op-Amp with MOSFET Input/CMOS Output
BiMOS Op-Amp with MOSFET Input/Bipolar Output
BiMOS Op-Amp with MOSFET Input/Bipolar Output
High Voltage Op-Amp
BiMOS Op-Amp with MOSFET Input/CMOS Output
Operational Transconductance Amplifier (OTA)
High Gain
Uncompensated High Slew Rate Op-Amp
Description
Minimum
Stable
Gain
1
1
1
1
1
1
1
1
3
GBWP
(MHz)
15.0
15.0
4.5
4.5
4.0
4.0
2.0
1.0
20.0
Slew
Rate
(V/µs)
30.0
30.0
9.0
9.0
5.0
10.0
75.0
0.5
120.0
Offset
Voltage
(mV)
2.0
8.0
2.0
5.0
2.0
6.0
0.4
1.0
5.0
Bias
Current
(µA)
5.000 pA
5.000 pA
10.000 pA
10.000 pA
0.012
5.000 pA
2.000
0.080
0.125
Maximum
Supply
Voltage
(±V)
8.0
8.0
18.0
18.0
50.0
8.0
18.0
22.0
20.0
Supply
Current
(mA/Amp)
2.00
2.00
4.00
4.00
3.20
2.00
1.00
1.70
4.00
No. of
Leads
8
8
8
8
8
8
8
8
8
Dual
CA3240AE
CA3240E
CA1458E
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output
High Gain
1
1
1
4.5
4.5
1.0
9.0
9.0
0.5
2.0
5.0
1.0
10.000 pA
10.000 pA
0.080
18.0
18.0
22.0
4.00
4.00
1.70
8
8
8
Transistor/Diode Arrays
Transistor Arrays
Mfr.Õs
Type
CA3046
CA3081
CA3082
CA3083
CA3086
CA3146E
CA3183AE
CA3096E
CA3096AE
CA3096CE
HFA3127B
Description
3 Transistors Plus a Differential Pair, fT > 300 MHz, 2 Matched Pairs ±5 mV
7 Common Emitter General Purpose NPN High Current Transistors
7 Common Collector General Purpose NPN High Current Transistors
5 Independent NPN Transistors. Q1 and Q2 Matched; II0 (at 1 mA) 2.5 µA Max.
3 Isolated NPN Transistors Plus a Differential Pair. fT>500 MHz Typ. from DC to 120 MHz
3 Transistors Plus a Differential Pair, fT > 500 MHz Typ. Operation from DC to 120 MHz
5 High Current/High Voltage NPN Transistors. Q1 and Q2 Matched at 1 mA
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent 8 GHz NPN Transistors, NF = 3.5 dB at 1 GHz (NPN/PNP)
V
(BR)CEO
Min.
(V)
15
16
16
15
15
30
40
35/Ð40
35/Ð40
24/Ð24
8
V
(BR)CBO
Min.
(V)
20
20
20
20
20
40
50
45/Ð40
45/Ð40
30/Ð24
12
h
FE
Min.
40
40
40
40
40
40
40
150/20
150/20
100/15
40
I
C
Max.
(mA)
50
100
100
100
50
75
75
50/Ð10
50/Ð10
50/Ð10
40
Package
Type
14 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
14 Lead PDIP
14 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead SOIC
13
Diode Array
Mfr.Õs
Type
CA3039
Description
6 Individual Ultra-Fast Low Capacitance Matched Diodes
V
(BR)R
Min.
(V)
5
I
R
Max.
(µA)
0.1
C
D
Typ.
(pF)
0.65
V
F1
-V
F2
Max.
(mV)
5 (IF=1 mA)
Package
Type
12 Lead TO-5
Same Day Shipments For Product In Stock
ALLIED
c
823

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