FLL810IQ-4C
L-Band High Power GaAs FET
FEATURES
•
•
•
•
•
•
Push-Pull Configuration
High Power Output: 80W
High PAE: 45%.
Excellent Linearity
Suitable for class AB operation.
Hermetically Sealed Package
DESCRIPTION
The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design
which offers excellent linearity, ease of matching, and greater consistency in
covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely
suited for use in WLL applications as it offers high gain, long term reliability and
ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
136
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain (Note 1)
Power-Added Efficiency
Drain Current
Thermal Resistance
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 28.0dBm.
Symbol
I
DSS
V
p
V
GSO
P
out
GL
η
add
I
DSR
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 220mA
I
GS
= -2.2mA
Limits
Min. Typ. Max.
-
-0.1
-5
48.0
8
-0.3
-
49.0
9.5
45
11.5
0.8
-
-0.5
-
-
-
-
15.0
1.1
Unit
A
V
V
dBm
dB
%
A
°C/W
V
DS
= 12V
f = 3.6 GHz
I
DS
= 5.0A
Pin = 43.0dBm
8.5
-
-
Channel to Case
-
Edition 1.1
October 2001
1
FLL810IQ-4C
L-Band High Power GaAs FET
OUTPUT POWER vs. FREQUENCY
VDS = 12V,
IDS(DC) = 5A
IMD & IDS(RF) vs. TOTAL OUTPUT POWER
VDS = 12V,
IDS(DC) = 5A,
fo = 3.6GHz,
f1 = 3.61GHz
-24
43dBm
38dBm
IMD (dBc)
18
16
14
IM3
IDS(RF) (A)
50
-28
-32
-36
-40
48
Output Power (dBm)
46
44
42
40
38
36
34
3.45
3.50
3.55
3.70
12
10
IM5
8
34dBm
-44
-48
-52
IDS(RF)
30dBm
6
4
2
26dBm
-56
-60
33 34 35 36 37 38 39 40 41 42 43 44 45
Total Output Power (dBm)
3.60
3.65
3.75
Frequency (GHz)
OUTPUT POWER &
η
add vs. INPUT POWER
VDS = 12V,
IDS(DC) = 5A,
f = 3.6GHz
48
Output Power (dBm)
46
44
42
40
38
36
34
Pout
50
η
add
η
add (%)
40
30
20
10
26 28 30 32 34 36 38 40 42
Input Power (dBm)
2
FLL810IQ-4C
L-Band High Power GaAs FET
S-PARAMETERS
VDS = 12V, IDS = 2500mA
FREQUENCY
(MHZ)
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
4200
4300
4400
4500
S11
MAG
.499
.617
.703
.761
.793
.801
.783
.747
.644
.492
.315
.397
.603
.743
.825
.878
.910
.937
.949
.953
.956
S21
ANG
MAG
1.973
1.880
1.735
1.784
1.689
1.803
1.949
2.087
2.398
2.627
2.798
2.612
2.173
1.814
1.493
1.222
.999
.849
.735
.681
.666
S12
ANG
MAG
.017
.017
.016
.016
.017
.017
.019
.021
.024
.031
.036
.034
.031
.024
.022
.019
.019
.017
.018
.018
.020
S22
ANG
MAG
.796
.773
.752
.729
.714
.678
.656
.604
.566
.506
.468
.504
.558
.580
.559
.535
.483
.418
.376
.343
.386
ANG
152.9
151.8
150.1
149.5
148.0
146.2
143.9
140.8
138.8
137.6
143.3
148.1
145.3
136.4
125.9
113.4
97.7
78.8
53.9
18.9
-17.4
-103.9
-120.1
-131.7
-141.4
-148.6
-155.5
-162.8
-169.1
-176.8
178.6
-166.2
-130.1
-128.8
-135.6
-143.0
-148.0
-152.6
-156.1
-159.8
-162.7
-165.1
-113.4
-125.9
-142.2
-153.8
-163.9
-178.8
171.0
154.5
136.9
116.1
88.0
59.6
33.1
13.3
-5.2
-20.4
-34.6
-46.9
-55.8
-67.5
-82.1
-111.7
-134.2
-149.9
-167.5
-176.4
161.0
136.6
119.4
94.7
80.3
48.3
15.7
-8.8
-33.0
-47.8
-59.2
-67.0
-76.4
-86.6
-96.7
-107.9
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
Download S-Parameters, click here
3
FLL810IQ-4C
L-Band High Power GaAs FET
Case Style "IQ"
24±0.35
2.5 MIN.
20.4±0.2
1
2
4-0.1
45°
2.4±0.15
4-2.6±0.2
8.0±0.15
17.4±0.2
6
3
4-2.0
2.5 MIN.
4-R1.3±0.2
5
6.0
4
14.9±0.2
15.5±0.2
5.5 Max.
1, 2: Gate
3: Source
4, 5: Drain
Unit: mm (inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
1.9±0.2
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI05019M200
4
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