Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Fairchild |
零件包装代码 | TO-3P |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
FJA4310O | FJA4310Y | FJA4310R | |
---|---|---|---|
描述 | Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN | Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN | Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN |
是否Rohs认证 | 不符合 | 不符合 | 不符合 |
厂商名称 | Fairchild | Fairchild | Fairchild |
零件包装代码 | TO-3P | TO-3P | TO-3P |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | TO-3P, 3 PIN |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | - | 10 A | 10 A |
集电极-发射极最大电压 | - | 140 V | 140 V |
配置 | - | SINGLE | SINGLE |
最小直流电流增益 (hFE) | - | 90 | 50 |
JESD-30 代码 | - | R-PSFM-T3 | R-PSFM-T3 |
JESD-609代码 | - | e0 | e0 |
元件数量 | - | 1 | 1 |
端子数量 | - | 3 | 3 |
最高工作温度 | - | 150 °C | 150 °C |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | RECTANGULAR | RECTANGULAR |
封装形式 | - | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | - | NPN | NPN |
最大功率耗散 (Abs) | - | 100 W | 100 W |
认证状态 | - | Not Qualified | Not Qualified |
表面贴装 | - | NO | NO |
端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | - | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | - | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | - | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | - | SILICON | SILICON |
标称过渡频率 (fT) | - | 30 MHz | 30 MHz |
Base Number Matches | - | 1 | 1 |
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