DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240
| 参数名称 | 属性值 |
| 零件包装代码 | DIMM |
| 包装说明 | DIMM, |
| 针数 | 240 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 访问模式 | DUAL BANK PAGE BURST |
| 最长访问时间 | 0.45 ns |
| 其他特性 | AUTO/SELF REFRESH |
| JESD-30 代码 | R-XDMA-N240 |
| 内存密度 | 8589934592 bi |
| 内存集成电路类型 | DDR DRAM MODULE |
| 内存宽度 | 64 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 240 |
| 字数 | 134217728 words |
| 字数代码 | 128000000 |
| 工作模式 | SYNCHRONOUS |
| 组织 | 128MX64 |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DIMM |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 端子形式 | NO LEAD |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| M378T2953CZ0-CD6 | M391T2953CZ0-CD6 | M378T6553CZ0-CD6 | M378T3354CZ0-CD6 | M391T6553CZ0-CD6 | |
|---|---|---|---|---|---|
| 描述 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | DDR DRAM Module, 64MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | DDR DRAM Module, 32MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | DDR DRAM Module, 64MX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 |
| 零件包装代码 | DIMM | DIMM | DIMM | DIMM | DIMM |
| 包装说明 | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, |
| 针数 | 240 | 240 | 240 | 240 | 240 |
| Reach Compliance Code | unknow | unknow | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST |
| 最长访问时间 | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 |
| 内存密度 | 8589934592 bi | 9663676416 bi | 4294967296 bit | 2147483648 bit | 4831838208 bi |
| 内存集成电路类型 | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
| 内存宽度 | 64 | 72 | 64 | 64 | 72 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 240 | 240 | 240 | 240 | 240 |
| 字数 | 134217728 words | 134217728 words | 67108864 words | 33554432 words | 67108864 words |
| 字数代码 | 128000000 | 128000000 | 64000000 | 32000000 | 64000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 组织 | 128MX64 | 128MX72 | 64MX64 | 32MX64 | 64MX72 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 自我刷新 | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | - | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
