• ZENER DIODE CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• ELECTRICALLY EQUIVALENT TO 1N4678 THRU 1N4717
• 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING
• 50
µ
A, LOW OPERATING CURRENT, ZENER DIODES
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperatures: -65°C to +175°C
Storage Temperatures: -65°C to +175°C
Forward Voltage @ 200 mA: 1.5 Volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
CDI
TYPE
NUMBER
(Note 1)
CD4678
CD4679
CD4680
CD4681
CD4682
CD4683
CD4684
CD4685
CD4686
CD4687
CD4688
CD4689
CD4690
CD4691
CD4692
CD4693
CD4694
CD4695
CD4696
CD4697
CD4698
CD4699
CD4700
CD4701
CD4702
CD4703
CD4704
CD4705
CD4706
CD4707
CD4708
CD4709
CD4710
CD4711
CD4712
CD4713
CD4714
CD4715
CD4716
CD4717
NOMINAL
ZENER
VOLTAGE
VZ
(Note 3)
VOLTS
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
27.0
28.0
30.0
33.0
36.0
39.0
43.0
ZENER
TEST
CURRENT
lZT
MAXIMUM
VOLTAGE
REGULATION
³VZ
(Note 2)
VOLTS
0.70
0.70
0.75
0.80
0.80
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.50
0.10
0.08
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.22
0.24
0.25
0.27
0.28
0.30
0.33
0.36
0.39
0.43
MAXIMUM REVERSE
LEAKAGE
CURRENT
lR @ VR
MAXIMUM
DC ZENER
CURRENT
lZM
mA
120.0
110.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
35.0
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
CD4678
thru
CD4717
23 MILS
15 MILS
µ
A
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
µ
A
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.8
32.6
BACKSIDE IS CATHODE
FIGURE 1
DESIGN DATA
METALLIZATION:
Top: (Anode).....................Al
Back: (Cathode)................Au
AL THICKNESS.......
......25,000
Å
Min
GOLD THICKNESS..........4,000
Å
Min
CHIP THICKNESS....................10
Mils
CIRCUIT LAYOUT DATA:
For Zener operation, cathode
must be operated positive with
respect to anode.
TOLERANCES:
ALL
Dimensions + 2 mils
NOTE 1
The JEDEC type numbers shown above have a standard tolerance of
+ 5% oF the nominal Zener voltage. Vz is measured with the diode in
thermal equilibrium at 25°C + 3°C.
VZ @ 100
µ
A minus VZ @ 10
µ
A.
Zener voltage is read using a pulse measurement, 10 milliseconds maximum.
NOTE 2
NOTE 3
6 LAKE STREET, LAWRENCE,
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
M A S S A C H U S E T T S 01841
FAX (978) 689-0803
197
15 MILS
23 MILS
CD4678
600
Dissipation (mW)
Pd, Rated Power
500
400
300
200
100
0
0
25
50
75
thru
CD4717
FIGURE 2
100
125
150
175
200
TA, Ambient temperature (C°)
POWER DERATING CURVE
1000
500
400
300
200
ZENER IMPEDANCE ZZT (OHMS)
3.
3
VO
LT
27
100
VO
LT
5.
1
VO
LT
50
40
30
20
11
VO
LT
10
6.2
5
4
3
2
VO
LT
1
.1
.2 .3 .4 .5
1
2 5
10
20
OPERATING CURRENT lZT (mA)
30 40
50
100
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
198
FPGA/CPLD
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