The AS7C1024 and AS7C31024 are high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM)
devices organized as 131,072 words × 8 bits. It is designed for memory applications where fast data access, low power, and
simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 10/12/15/20 ns with output enable access times (t
OE
) of 5/6/8/10 ns
are ideal for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion
with multiple-bank systems.
When CE1 is high or CE2 is low the devices enter standby mode. If inputs are still toggling, the device will consume I
SB
power. If the bus is static, then full standby power is reached (I
SB1
or I
SB2
). For example, the AS7C31024 is guaranteed not
to exceed 0.33mW under nominal full standby conditions. All devices in this family will retain data when VCC is reduced as
low as 2.0V.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/
O0-I/O7 is written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To
avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE)
or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE)
high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable is inactive, output
enable is inactive, or write enable is active, output drivers stay in high-impedance mode.
Absolute maximum ratings
Parameter
Voltage on V
CC
relative to GND
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with V
CC
applied
DC current into outputs (low)
AS7C1024
AS7C31024
Symbol
V
t1
V
t1
V
t2
P
D
T
stg
T
bias
I
OUT
Min
–0.50
-0.50
–0.50
–
–65
–55
–
Max
+7.0
+5.0
V
CC
+0.50
1.0
+150
+125
20
Unit
V
V
V
W
°C
°C
mA
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this spec ification is not implied. Expo-
sure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
H
H
L
OE
X
X
H
L
X
Data
High Z
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
, I
SB1
)
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (
ICC
)
Key: X = Don’t Care, L = Low, H = High
2
ALLIANCE SEMICONDUCTOR
10/18/00
®
AS7C1024
AS7C31024
Recommended operating conditions
Parameter
Supply voltage
Device
AS7C1024
AS7C31024
AS7C1024
Input voltage
AS7C31024
commercial
industrial
Symbol
V
CC
V
CC
V
IH
V
IH
V
IL†
Ambient operating temperature
†
Min
4.5
3.0
2.2
2.0
–0.5
0
–40
Nominal
5.0
3.3
–
–
–
–
–
Max
5.5
3.6
V
CC
+ 0.5
V
CC
+ 0.5
0.8
70
85
Unit
V
V
V
V
V
°C
°C
T
A
T
A
V
IL
min = –3.0V for pulse width less than t
RC/2
.
DC operating characteristics (over the operating range)
三星刚出的旗舰新机Galaxy S III固然不错，但是高昂的价格不是每个人都能承受的起。昨天我们报道了一部山寨版的i9300，而现在该机价格和具体配置已经全部出炉。 这款山寨的Galaxy S III名叫HDC Galaxy S3，其外形甚至UI界面都与原型机异常相似。该机的三围为138×70×9.2mm，配备了一块4.7寸触摸屏，分辨率只有800×480像素。
该机还搭载了...[详细]
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
