ASMT-Mxx4
Moonstone® 1W Power LED Light Source
Data Sheet
Description
The Moonstone® 1W Power LED Light Source is a high per-
formance energy efficient device which can handle high
thermal and high driving current. The exposed pad design
has excellent heat transfer from the package to the moth-
erboard.
The low profile package design is suitable for a wide variety
of applications especially where height is a constraint.
The package is compatible with reflow soldering. This
will give more freedom and flexibility to the light source
designer.
The 1W Power LED light source can be mounted onto
metal core PCB enabling optimum heat dissipation and
ease of installation.
Features
x
Available in Cool White & Warm White color
x
Energy efficient
x
Exposed pad for excellent heat transfer
x
Suitable for reflow soldering process
x
High current operation
x
Long operation life
x
Wide viewing angle
x
Silicone encapsulation
x
Non-ESD sensitive (threshold > 16KV)
x
MSL 2a products
Specifications
x
InGaN Technology
x
3.5 V (max) at 350 mA
x
110° viewing angle
Applications
x
Sign backlight, billboard illumination or backlight
x
Exit sign or emergency sign lightings
x
Commercial lightings
x
Accent and marker lightings
x
Pathway lighting
x
Task lighting
x
Reading lights
x
Decorative lighting
x
Garden lighting
x
Architectural lighting
x
Portable (flash light, bicycle head light
Package Dimension for Moonstone®
10.00
1
3
3.30
8.50
Metal Slug
3
Ø 5.26
10.60
8.50
Ø 8.00
1.27
Anode
Heat Sink
2 Cathode
LED
+
−
ZENER
2.00
1.30
1
5.08
2
0.81
5.25
Figure 1. Moonstone® package outline drawing.
Notes:
1. All dimensions are in millimeters.
2. Tolerance is ±0.1 mm unless otherwise specified.
3. Terminal finish: Ag plating.
Package Dimension for Moonstone® on MCPCB
16.00
2.50
1
3
∅
5.00
Anode
Heat
Sink
2 Cathode
60
°
20.00
14.00
∅
3.00
∅
19.00
4.00
R
1.60
3.00
19.00
2.30
1.30
4.60
24.00
Figure 2. MCPCB I package outline drawing.
Notes:
1. All dimensions in millimeters.
2. Tolerance is ±0.1 mm unless otherwise specified.
1.40
1.60
4.90
3.30
19.90
Figure 3. MCPCB II package outline drawing.
2
Part Numbering System
ASMT-M x
1
x
2
4 - N x
3
x
4
x
5
x
6
Packaging Option
Color Bin Selection
Max Flux Bin Selection
Min Flux Bin Selection
Moonstone®Type
0 – Non-diffused
B – Diffused
A -
Non-diffused on MCPCB I
C - Diffused on MCPCB I
K - Non-diffused on MCPCB II
L - Diffused on MCPCB II
Color
W – Cool White
Y – Warm White
Note:
1. Please refer to Page 9 for selection details.
Device Selection Guide (T
j
= 25°C)
Luminous Flux, Φ
V [1,2]
(lm)
Part Number
[3]
ASMT-MWx
2
4-NKL00
ASMT-MWx
2
4-NKM00
ASMT-MYx
2
4-NKL00
ASMT-MWx
2
4-NKL00
ASMT-MWx
2
4-NKM00
ASMT-MYx
2
4-NKL00
Warm White
Cool White
Diffused
Warm White
Diffused
Color
Cool White
Min.
56.0
56.0
56.0
56.0
56.0
56.0
Typ.
75.0
80.0
70.0
70.0
75.0
65.0
Max.
95.0
124.0
95.0
95.0
124.0
95.0
Test
Current
(mA)
350
350
350
350
350
350
Dice
Technology
InGaN
InGaN
InGaN
InGaN
Electrically
Isolated
Metal Slug
Yes
Yes
Yes
Yes
Yes
Yes
Notes:
1. Φ
V
is the total luminous flux output as measured with an integrating sphere at 25ms mono pulse condition.
2. Flux tolerance is ±10 %.
3. Flux performance for respective part number is similar when device on MCPCB I or MCPCB II.
3
Absolute Maximum Ratings (T
A
= 25°C)
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation
LED Junction Temperature
LED Junction Temperature for short term application
Operating Ambient Temperature Range
Storage Temperature Range
Soldering Temperature
Reverse Voltage
[3]
Notes:
1. Derate linearly based on Figure 11.
2. Pulse condition duty factor = 10%, Frequency = 1kHz.
3. Not recommended for reverse bias operation.
ASMT-Mxx4
350
1000
1225
125
145
-40 to +110
-40 to +120
Refer to Figure 13
Not recommended
Units
mA
mA
mW
°C
°C
°C
°C
Optical Characteristics at 350 mA (T
J
= 25°C)
Correlated Color Temperature,
CCT (Kelvin)
Part Number
ASMT-MWx
2
4-NKL00
ASMT-MWx
2
4-NKM00
ASMT-MYx
2
4-NKL00
ASMT-MWx
2
4-NKL00
ASMT-MWx
2
4-NKM00
ASMT-MYx
2
4-NKL00
Warm White Diffused
Warm White
Cool White Diffused
Viewing Angle,
2θ½
[2]
(°)
Typ
110
110
110
110
110
110
Luminous Efficiency
(lm/W)
Typ
67
71
63
63
67
58
Color
Cool White
Min.
4000
4000
2600
4000
4000
2600
Max.
10000
10000
4000
10000
10000
4000
Notes:
1.
T½
is the off-axis angle where the luminous intensity is ½ the peak intensity.
Electrical Characteristic at 350 mA (T
J
= 25°C)
Forward Voltage V
F
(Volts) at I
F
= 350mA
Dice type
InGaN
Thermal Resistance Rθ
j-ms
( °C/W)
[1]
Typ.
10
Min.
2.8
Typ.
3.2
Max.
3.5
Note:
1. RT
j-ms
is the Thermal Resistance from LED junction to metal slug.
4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
1.4
1.2
RELATIVE LUMINOUS FLUX
(NORMALIZED AT 350 mA)
780
WARM WHITE
COOL
WHITE
1
0.8
0.6
0.4
0.2
0
430
480
530 580 630
WAVELENGTH - nm
680
730
0
50 100 150 200 250 300 350 400 450 500
DC FORWARD
CURRENT
- mA
Figure 4. Relative Intensity vs. Wavelength.
RELATIVE INTENSITY
Figure 5. Relative Luminous Flux vs. Mono Pulse Current.
500
450
400
350
300
250
200
150
100
50
0
0
0.5
1
3
3.5
4
1.5
2
2.5
FORWARD VOLTAGE - V
Figure 6. Forward Current vs. Forward Voltage.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
FORWARD
CURRENT
- mA
NORMALIZED INTENSITY
-60
-30
0
30
60
ANGULAR DISPLACEMENT - DEGREES
90
Figure 7. Radiation Pattern.
1.4
1.2
PULSE CURRENT,
I
P
- A
1.0
0.8
0.6
0.4
0.2
0.0
0.00001 0.0001 0.001 0.01
0.1
1
PULSE
DURATION, t
p
-
sec
10
100
t
D=
p
T
t
p
I
F
T
D=
0.05
0.10
0.25
0.50
1.00
1.4
1.2
PULSE CURRENT,
I
P
- A
1.0
0.8
0.6
0.4
0.2
t
D=
p
T
t
p
I
F
T
D=
0.05
0.10
0.25
0.50
1.00
0.0
0.00001 0.0001 0.001 0.01
0.1
1
PULSE
DURATION, t
p
-
sec
10
100
Figure 8. Maximum pulse current vs. ambient temperature. Derated based
on T
A
= 25°C, RT
J-A
= 50°C/W.
Figure
9.
Maximum pulse current vs. ambient temperature. Derated based
on T
A
= 85°C, RT
J-A
= 50°C/W.
5
Microchip MCU
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