KM736V889
KM718V989
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
History
Initial draft
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS
to V
DD
to Max.
Change DC Characteristics.
I
SB
value from 80mA to 130mA at -60
I
SB
value from 70mA to 120mA at -67
I
SB
value from 65mA to 110mA at -72
I
SB
value from 50mA to 100mA at -10
I
SB1
value from 10mA to 30mA
I
SB2
value from 10mA to 30mA
1. Remove speed bin -60.
2. Changed DC condition at Icc and parameters
Icc ; from 400mA to 420mA at -67,
from 375mA to 400mA at -72,
from 300mA to 350mA at -10,
I
SB
; from 120mA to 150mA at -67,
from 110mA to 130mA at -72,
from 100mA to 120mA at -10,
1. A
DD
x32 organization.
1. A
DD
V
DDQ
Supply voltage( 2.5V I/O )
1. Changed V
OL
Max value from 0.2V to 0.4V at 2.5V I/O.
1. Final spec Release.
2. Remove x32 organization.
1. Remove V
DDQ
Supply voltage( 2.5V I/O )
1. Add V
DDQ
Supply voltage( 2.5V I/O )
1. Change tOE from 4.0ns to 3.8ns at -72 .
1. Add tCYC 167MHz and 200MHz.
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -67,
from 400mA to 350mA at -72,
from 350mA to 300mA at -10,
1. Change tCD from 4.0ns to 3.8ns at -72 .
Draft Date
April. 10 . 1998
June .08. 1998
Remark
Preliminary
Preliminary
0.2
Aug . 27. 1998
Preliminary
0.3
Sep. 09. 1998
Preliminary
0.4
0.5
0.6
1.0
Oct. 15. 1998
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Preliminary
Preliminary
Preliminary
Final
2.0
3.0
4.0
5.0
Feb. 25. 1999
May. 13. 1999
July. 05. 1999
Nov. 19. 1999
Final
Final
Final
Final
6.0
March 14. 2000 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
March 2000
Rev 6.0
KM736V889
KM718V989
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-bit Synchronous Pipelined Burst SRAM
FEATURES
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear
burst.
• Three Chip Enables for simple depth expansion with No Data
Contention only for TQFP ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A / 119BGA(7x17 Ball Grid Array Package)
GENERAL DESCRIPTION
The KM736V889 and KM718V989 are 9,437,184-bit Syn-
chronous Static Random Access Memory designed for high
performance second level cache of Pentium and Power PC
based System.
It is organized as 256K(512K) words of 36(18) bits and inte-
grates address and control registers, a 2-bit burst address
counter and added some new functions for high perfor-
mance cache RAM applications; GW, BW, LBO, ZZ. Write
cycles are internally self-timed and synchronous.
Full bus-width write is done by GW, and each byte write is
performed by the combination of WEx and BW when GW is
high. And with CS
1
high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status
processor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated inter-
nally in the system′s burst sequence and are controlled by
the burst address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(lin-
ear or interleaved).
ZZ pin controls Power Down State and reduces Stand-by
current regardless of CLK.
The KM736V889 and KM718V989 are fabricated using
SAMSUNG′s high performance CMOS technology and is
available in a 100pin TQFP and 119BGA package. Multiple
power and ground pins are utilized to minimize ground
bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol -50 -60 -67 -72 -10 Unit
t
CYC
t
CD
t
OE
5.0 6.0 6.7 7.2 10
3.1 3.5 3.8 3.8 4.5
3.1 3.5 3.8 3.8 4.5
ns
ns
ns
LOGIC BLOCK DIAGRAM
CLK
LBO
CONTROL
REGISTER
ADV
ADSC
BURST CONTROL
LOGIC
BURST
ADDRESS
COUNTER
A
0
~A
1
A
0
~A
17
or A
0
~A
18
ADDRESS
REGISTER
A
2
~A
17
or A
2
~A
18
A′
0
~A′
1
256Kx36 , 512Kx18
MEMORY
ARRAY
ADSP
CS
1
CS
2
CS
2
GW
BW
WEx
(x=a,b,c,d or a,b)
OE
ZZ
DATA-IN
REGISTER
CONTROL
REGISTER
CONTROL
LOGIC
OUTPUT
REGISTER
BUFFER
DQa
0
~ DQd
7
or DQa0 ~ DQb7
DQPa ~ DQPd
DQPa,DQPb
-2-
March 2000
Rev 6.0
KM736V889
KM718V989
PIN CONFIGURATION
(TOP VIEW)
256Kx36 & 512Kx18 Synchronous SRAM
ADSC
ADSP
WEd
WEb
WEa
WEc
ADV
83
CLK
CS
1
CS
2
CS
2
V
DD
GW
V
SS
BW
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
A
5
A
4
A
3
A
2
A
1
A
0
A
17
A
10
A
11
A
12
A
13
A
14
A
15
LBO
N.C.
N.C.
V
SS
PIN NAME
SYMBOL
A
0
- A
17
PIN NAME
Address Inputs
TQFP PIN NO.
SYMBOL
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~c
7
DQd
0
~d
7
DQPa~P
d
V
DDQ
V
SSQ
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
TQFP PIN NO.
15,41,65,91
17,40,67,90
14,16,38,39,42,66
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
32,33,34,35,36,37,43
44,45,46,47,48,49,50
81,82,99,100
ADV
Burst Address Advance
83
ADSP
Address Status Processor 84
ADSC
Address Status Controller 85
CLK
Clock
89
CS
1
Chip Select
98
CS
2
Chip Select
97
CS
2
Chip Select
92
WEx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
GW
Global Write Enable
88
BW
Byte Write Enable
87
ZZ
Power Down Input
64
LBO
Burst Mode Control
31
N.C.
V
DD
Output Power Supply
(2.5V or 3.3V)
Output Ground
Notes :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
2. The pin 42 is reserved for address bit for the 16Mb .
-3-
A
16
50
DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
N.C.
V
DD
N.C.
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
KM736V889(256Kx36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
N.C.
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa
March 2000
Rev 6.0
KM736V889
KM718V989
PIN CONFIGURATION
(TOP VIEW)
256Kx36 & 512Kx18 Synchronous SRAM
ADSC
ADSP
WEb
WEa
ADV
83
N.C.
N.C.
CLK
CS
1
CS
2
CS
2
V
DD
GW
V
SS
BW
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
18
A
11
A
12
A
13
A
14
A
15
A
16
PIN NAME
SYMBOL
A
0
- A
18
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,43
44,45,46,47,48,49,50
80,81,82,99,100
83
84
85
89
98
97
92
93,94
86
88
87
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
TQFP PIN NO.
15,41,65,91
17,40,67,90
1,2,3,6,7,14,16,25,28,29,
30,38,39,42,51,52,53,56,
57,66,75,78,79,95,96
58,59,62,63,68,69,72,73
8,9,12,13,18,19,22,23
74,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
ADV
ADSP
ADSC
CLK
CS
1
CS
2
CS
2
WEx
OE
GW
BW
ZZ
LBO
Burst Address Advance
Address Status Processor
Address Status Controller
Clock
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
LBO
V
SS
DQa
0
~ a
7
DQb
0
~ b
7
DQPa, Pb
V
DDQ
V
SSQ
Data Inputs/Outputs
Output Power Supply
(2.5V or 3.3V)
Output Ground
Notes :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
2. The pin 42 is reserved for address bit for the 16Mb .
-4-
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
0
DQb
1
V
SSQ
V
DDQ
DQb
2
DQb
3
N.C.
V
DD
N.C.
V
SS
DQb
4
DQb
5
V
DDQ
V
SSQ
DQb
6
DQb
7
DQPb
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
KM718V989(512Kx18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQPa
DQa
7
DQa
6
V
SSQ
V
DDQ
DQa
5
DQa
4
V
SS
N.C.
V
DD
ZZ
DQa
3
DQa
2
V
DDQ
V
SSQ
DQa
1
DQa
0
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
March 2000
Rev 6.0
KM736V889
KM718V989
256Kx36 & 512Kx18 Synchronous SRAM
119BGA PACKAGE PIN CONFIGURATIONS
(TOP VIEW)
KM736V889(256Kx36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
2
A
CS
2
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
NC
3
A
A
A
V
SS
V
SS
V
SS
WEc
V
SS
NC
V
SS
WEd
V
SS
V
SS
V
SS
LBO
A
NC
4
ADSP
ADSC
V
DD
NC
CS
1
OE
ADV
GW
V
DD
CLK
NC
BW
A
1
*
A
0
*
V
DD
A
NC
5
A
A
A
V
SS
V
SS
V
SS
WEb
V
SS
NC
V
SS
WEa
V
SS
V
SS
V
SS
NC
A
NC
6
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
7
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
Note :
* A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
PIN NAME
SYMBOL
A
A
0
,A
1
ADV
ADSP
ADSC
CLK
CS
1
CS
2
WEx
(x=a,b,c,d)
OE
GW
BW
ZZ
LBO
PIN NAME
Address Inputs
Burst Count Address
Burst Address Advance
Address Status Processor
Address Status Controller
Clock
Chip Select
Chip Select
Byte Write Inputs
V
DD
V
SS
N.C.
DQa
DQb
DQc
DQd
DQPa~Pd
V
DDQ
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
SYMBOL
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
Data
Data
Data
Data
Data
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outpus
Output Power Supply
(2.5V or 3.3V)
-5-
March 2000
Rev 6.0
stm32/stm8
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