MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF281/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
•
Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –29 dBc
•
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
S–Parameter Characterization at High Bias Levels
•
Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MRF281SR1
MRF281ZR1
2000 MHz, 4 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–03, STYLE 1
(NI–200S)
(MRF281SR1)
CASE 458C–03, STYLE 1
(NI–200Z)
(MRF281ZR1)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
±20
20
0.115
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
5.74
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate–Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
74
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF281SR1 MRF281ZR1
1
ELECTRICAL CHARACTERISTICS continued
(T
C
= 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 25 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 0.1 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
All Phase Angles at Frequency of Test)
G
ps
11
12.5
—
dB
C
iss
C
oss
C
rss
—
—
—
5.5
3.3
0.17
—
—
—
pF
pF
pF
V
GS(th)
V
GS(q)
V
DS(on)
2.4
3
0.18
3.2
4.1
0.24
4
5
0.30
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
η
30
33
—
%
IRL
—
–16
–10
dB
IMD
—
–31
–29
dBc
G
ps
11
12.5
—
dB
η
30
—
—
%
IRL
—
–16
–10
dB
IMD
—
–31
—
dBc
G
ps
10.5
12
—
dB
η
40
44
—
%
Ψ
No Degradation In Output Power
MRF281SR1 MRF281ZR1
2
MOTOROLA RF DEVICE DATA
Z
o
= 25
Ω
2.0 GHz
Z
in
2.0 GHz
f = 1.5 GHz
Z
OL
*
f = 1.5 GHz
V
DD
= 26 V, I
DQ
= 25 mA, P
out
= 4 W (PEP)
f
MHz
1500
1600
1700
1800
1900
2000
Z
in
Z
in
Ω
3.15 – j5.3
3.1 – j3.8
3.1 – j2.3
3.1 – j0.7
3.1 + j0.9
3.1 + j2.4
Z
OL
*
Ω
15.5 – j13.6
14.7 – j12.5
14.0 – j11.7
13.4 – j11.0
12.8 – j10.1
12.2 – j9.2
= Complex conjugate of source impedance.
Z
OL
* = Complex conjugate of the optimum load
impedance at given output power, voltage,
IMD, bias current and frequency.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
in
Z
*
OL
Figure 1. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF281SR1 MRF281ZR1
3
Table 1. Common Source S–Parameters at V
DS
= 26 Vdc, I
D
= 250 mAdc
f
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
S
11
|S
11
|
.982
.947
.912
.886
.859
.854
.841
.837
.838
.841
.840
.849
.848
.856
.858
.871
.868
.870
.872
.877
.876
.880
.882
.886
.896
.897
S
21
∠
f
-28
-52
-73
-90
-103
-114
-123
-131
-138
-143
-149
-153
-158
-162
-167
-170
-173
-176
-180
178
174
171
168
165
162
158
S
12
∠
f
160
143
129
117
108
100
93
87
81
76
72
68
64
60
57
54
51
49
46
44
41
39
36
34
32
29
S
22
∠
f
73
58
45
36
28
23
18
15
12
11
12
13
18
26
36
54
69
82
95
104
109
111
114
114
115
117
dB
18.9
17.0
15.0
12.9
11.1
9.69
8.54
7.57
6.69
6.01
5.41
4.91
4.51
4.12
3.78
3.50
3.22
3.00
2.80
2.63
2.47
2.36
2.21
2.12
1.97
1.89
|S
12
|
.008
.015
.019
.022
.022
.023
.022
.021
.019
.018
.015
.013
.012
.010
.009
.008
.009
.009
.011
.013
.015
.018
.021
.024
.027
.029
|S
22
|
.851
.811
.770
.741
.719
.718
.709
.714
.719
.728
.742
.745
.758
.769
.786
.797
.808
.823
.828
.845
.843
.859
.858
.872
.863
.873
∠
f
-13
-25
-33
-42
-47
-51
-56
-59
-62
-64
-66
-68
-69
-70
-70
-72
-71
-72
-72
-72
-72
-71
-72
-70
-70
-69
MRF281SR1 MRF281ZR1
4
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF281SR1 MRF281ZR1
5
Microchip MCU
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