RURU15070, RURU15080,
RURU15090, RURU150100
January 2002
150A, 700V - 1000V Ultrafast Diodes
Package
JEDEC STYLE SINGLE LEAD TO-218
ANODE
CATHODE
(FLANGE)
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <125ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Symbol
K
Description
RURU15070, RURU15080 and RURU15090 and RURU150100 are
ultrafast diodes with soft recovery characteristics (t
RR
< 125ns).
They have low forward voltage drop and are silicon nitride passi-
vated ion-implanted epitaxial planar construction.
A
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies and
other power switching applications. Their low stored charge and
ultrafast recovery with soft recovery characteristic minimizes ring-
ing and electrical noise in many power switching circuits reducing
power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER
RURU15070
RURU15080
RURU15090
RURU150100
PACKAGE
TO-218
TO-218
TO-218
TO-218
BRAND
RURU15070
RURU15080
RURU15090
RUR150100
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RURU15070
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . I
F(AV)
(T
C
= +65
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . T
STG
, T
J
©2002 Fairchild Semiconductor Corporation
RURU15080
800
800
800
150
300
1500
375
50
-65 to +175
RURU15090
900
900
900
150
300
1500
375
50
-65 to +175
RURU150100
1000
1000
1000
150
300
1500
375
50
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o
C
700
700
700
150
300
1500
375
50
-65 to +175
RURU15070, RURU15080, RURU15090, RURU150100 Rev. B
Specifications RURU15070, RURU15080, RURU15090, RURU150100
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
RURU15070
SYMBOL
V
F
V
F
I
R
TEST CONDITION
I
F
= 150A, T
C
= +25
o
C
I
F
= 150A, T
C
= +150
o
C
V
R
= 700V, T
C
= +25
o
C
V
R
= 800V, T
C
= +25
o
C
V
R
= 900V, T
C
= +25
o
C
V
R
= 1000V, T
C
= +25
o
C
I
R
V
R
= 700V, T
C
= +150
o
C
V
R
= 800V, T
C
= +150
o
C
V
R
= 900V, T
C
= +150
o
C
V
R
= 1000V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 150A, dI
F
/dt = 100A/
µ
s
t
A
t
B
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
I
F
= 150A, dI
F
/d t = 100A/
µ
s
I
F
= 150A, dI
F
/dt = 100A/
µ
s
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RURU15080
RURU15090
RURU150100
TYP MAX
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
-
-
-
500
-
-
-
3.0
125
200
-
-
0.4
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
mA
mA
mA
mA
ns
ns
ns
ns
o
C/W
TYP MAX MIN
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
500
-
-
-
3.0
-
-
-
125
200
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX MIN
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
-
500
-
-
-
3.0
-
-
125
200
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX MIN
-
-
-
-
-
-
-
-
-
-
-
-
100
75
-
1.9
1.7
-
-
500
-
-
-
3.0
-
125
200
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
R
1
L
1
= SELF INDUCTANCE OF R
4
+ L
LOOP
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
L
LOOP
DUT
Q
4
0
0.25 I
RM
C1
R
4
I
RM
I
F
dI
F
dt
t
RR
t
A
t
B
t
3
0
-V
2
R
3
Q
3
-V
4
V
R
V
RM
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
©2002 Fairchild Semiconductor Corporation
RURU15070, RURU15080, RURU15090, RURU150100 Rev. B
RURU15070, RURU15080, RURU15090, RURU150100
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI
2
[VAVL/(VAVL - V
DD
)]
Q
1
& Q
2
ARE 1000V MOSFETs
Q
1
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
L
R +
V
DD
130Ω
VAVL
1MΩ
DUT
12V
Q
2
I
L
I V
I
L
130Ω
CURRENT
SENSE
V
DD
-
t
0
t
1
t
2
t
12V
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
RURU15070, RURU15080, RURU15090, RURU150100 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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