BL
Galaxy Electrical
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBT3904).
Low Current (Max:-100mA).
Low Voltage(Max:-40v).
Production specification
MMBT3906
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
MMBT3906
Marking
2A
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Transistor mounted on an FR4 printed-circuit board.
Tamb≤25°C
CONDITIONS
open emitter
open base
open collector
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
-40
-40
-6
-100
-200
-100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
Document number: BL/SSSTC062
Rev.A
www.galaxycn.com
1
BL
Galaxy Electrical
PNP General Purpose Transistor
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
SYMBOL
I
CBO
I
EBO
PARAMETER
collector cut-off current
emitter cut-off current
CONDITIONS
I
E
= 0; V
CB
= -30 V
I
C
= 0; V
EB
= 6 V
V
CE
= -1V;
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10mA
I
C
= -50mA
I
C
= -100mA
I
C
= -10mA; I
B
= 1mA
B
Production specification
MMBT3906
unless otherwise specified
MIN.
-
-
60
80
100
60
30
-
-
-
-
-
-
250
-
MAX.
-50
-50
-
-
300
-
-
-200
-300
-850
-950
4.5
10
-
4
mV
mV
mV
mV
pF
pF
MHz
dB
UNIT
nA
nA
h
FE
DC current gain
V
CEsat
V
BEsat
C
c
C
e
f
T
NF
collector-emitter saturation
voltage
base-emitter saturation
voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= -50mA; I
B
= -5mA
B
I
C
= -10mA; I
B
= -1mA
B
I
C
= -50mA; I
B
= -5mA
B
I
E
= I
e
= 0; V
CB
= -5 V;
f = 1 MHz
I
C
= I
c
= 0; V
EB
= -500 mV;
f = 1 MHz
I
C
= -10mA; V
CE
= -20 V;
f = 100MHz
I
C
= -100μA; V
CE
= -5V;
R
S
= 1 kΩ;f = 10Hz to15.7 kHz
Switching times (between 10% and 90% levels);
t
on
t
d
t
r
t
off
t
s
t
r
Note
Turn-on time
delay time
rise time
turn-off time
storage time
fall time
Pulse test: tp≤300 ms; d≤0.02.
I
Con
= -10mA; I
Bon
= -1mA;
I
Boff
= -1mA
-
-
-
-
-
-
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
Document number: BL/SSSTC062
Rev.A
www.galaxycn.com
2
BL
Galaxy Electrical
PNP General Purpose Transistor
Production specification
MMBT3906
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC062
Rev.A
www.galaxycn.com
3
BL
Galaxy Electrical
PNP General Purpose Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
E
Production specification
MMBT3906
SOT-23
SOT-23
Dim
A
B
C
D
E
G
H
H
C
Min
2.85
1.25
0.37
0.35
1.85
0.02
2.35
Max
2.95
1.35
0.43
0.48
1.95
0.1
2.45
K
B
1.0Typical
D
G
J
J
K
0.1Typical
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
Device
MMBT3906
INFORMATION
Package
SOT-23
Shipping
3000/Tape&Reel
Document number: BL/SSSTC062
Rev.A
www.galaxycn.com
4
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