UNISONIC TECHNOLOGIES CO., LTD
MMBTH10
RF TRANSISTOR
DESCRIPTION
The UTC
MMBTH10
is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
MMBTH10L-x-AE3-R
MMBTH10G-x-AE3-R
MMBTH10L-x-AL3-R
MMBTH10G-x-AL3-R
MMBTH10L-x-AN3-R
MMBTH10G-x-AN3-R
MMBTH10L-x-AQ3-R
MMBTH10G-x-AQ3-R
Package
SOT-23
SOT-323
SOT-523
SOT-723
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
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Copyright © 2012 Unisonic Technologies Co., Ltd
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MMBTH10
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
3
V
SOT-23
225
mW
Power Dissipation
SOT-323/SOT-523
P
C
200
mW
SOT-723
150
mW
Collector current
I
C
50
mA
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100µA
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=1mA
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10µA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=4mA, I
B
=400µA
Base-Emitter on Voltage
V
BE(ON)
V
CE
=10V, I
C
=4mA
Collector Cut-off Current
I
CBO
V
CB
=25V
Emitter Cut-off Current
I
EBO
V
EB
=2V
DC Current Gain
h
FE
V
CE
=10V, I
C
=4mA
Output Capacitance
C
ob
V
CB
=10V, f=1MHZ
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=4mA, f=100MHz
MIN
30
25
3
TYP
MAX
UNIT
V
V
V
mV
mV
nA
nA
pF
MHz
500
950
100
100
60
0.7
650
CLASSIFICATION OF h
FE
RANK
RANGE
A
60-100
B
90-130
C
120-200
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MMBTH10
Collector Current, I
CBO
(nA)
Base Emitter Voltage, V
BE(SAT)
(V)
Typical Pulsed Current Gain, h
FE
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Base Emitter On Voltage, V
BE(ON)
(V)
Collector-Emitter Voltage, V
CE(SAT)
(V)
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Power Dissipation, P
D
(mW)
NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
120
NPN SILICON TRANSISTOR
Input Admittance
Output Admittance, |Yob| (mmhos)
V
CE
=10V
I
C
=5mA
g
ib
12
10
8
6
Output Admittance
V
CE
=10V
I
C
=5mA
Input Admittance, |Yib| (mmhos)
80
40
0
-40
-80
-120
b
ib
b
ob
4
g
ob
2
0
0
200
500
1000
100
200
500
1000
Frequency, f (MHz)
Frequency, f (MHz)
120
Forward Transfer Admittance
b
fb
80
40
0
g
fb
-40
-80
-120
Reverse Admittance, |Yrb| (mmhos)
Forward Admittance, |Yfb| (mmhos)
V
CE
=10V
I
C
=5mA
8
Reverse Transfer Admittan
V
CE
=10V
I
C
=5mA
6
4
-b
rb
2
-g
rb
0
0
200
500
1000
0
200
500
1000
Frequency, f (MHz)
Input Admittance
Output Admittance, |Yoe| (mmhos)
V
CE
=10V
Ic=2mA
g
ie
16
12
b
ie
8
4
0
Frequency, f (MHz)
Output Admittance
V
CE
=10V
Ic=2mA
24
6
5
4
Input Admittance, |Yie| (mmhos)
20
b
oe
3
2
1
g
oe
0
0
200
500
1000
0
200
500
1000
Frequency, f (MHz)
Frequency, f (MHz)
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MMBTH10
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Rorward Admittance, |Yfe| (mmhos)
UNISONIC TECHNOLOGIES CO., LTD
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Reverse Admittance, |Yre| (mmhos)
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