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7025L55JI

产品描述Application Specific SRAM, 8KX16, 55ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84
产品类别存储    存储   
文件大小183KB,共22页
制造商IDT (Integrated Device Technology)
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7025L55JI概述

Application Specific SRAM, 8KX16, 55ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84

7025L55JI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
包装说明1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间55 ns
I/O 类型COMMON
JESD-30 代码S-PQCC-J84
JESD-609代码e0
内存密度131072 bit
内存集成电路类型APPLICATION SPECIFIC SRAM
内存宽度16
湿度敏感等级1
功能数量1
端口数量2
端子数量84
字数8192 words
字数代码8000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8KX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装等效代码LDCC84,1.2SQ
封装形状SQUARE
封装形式CHIP CARRIER
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源5 V
认证状态Not Qualified
最大待机电流0.004 A
最小待机电流2 V
最大压摆率0.25 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式J BEND
端子节距1.27 mm
端子位置QUAD
处于峰值回流温度下的最长时间30

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HIGH-SPEED
8K x 16 DUAL-PORT
STATIC RAM
IDT7025S/L
Features
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/17/20/25/35/55ns (max.)
Low-power operation
– IDT7025S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7025L
Active: 750mW (typ.)
Standby: 1mW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT7025 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = H for
BUSY
output flag on Master
M/S = L for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible, single 5V (±10%) power supply
Available in 84-pin PGA, Flatpack, PLCC, and 100-pin Thin
Quad Flatpack
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
R/W
L
UB
L
R/W
R
UB
R
LB
L
CE
L
OE
L
LB
R
CE
R
OE
R
I/O
8L
-I/O
15L
I/O
0L
-I/O
7L
BUSY
L
A
12L
A
0L
(1,2)
I/O
8R
-I/O
15R
I/O
Control
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
A
12R
A
0R
(1,2)
Address
Decoder
13
MEMORY
ARRAY
13
Address
Decoder
CE
L
OE
L
R/W
L
SEM
L
(2)
INT
L
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull.
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
R
INT
R
(2)
2683 drw 01
M/S
JULY 2012
1
DSC 2683/11
©2012 Integrated Device Technology, Inc.

7025L55JI相似产品对比

7025L55JI 7025S20PFI 7025L17PFI 7025L25PFI 7025S55PFI 7025L55PFI
描述 Application Specific SRAM, 8KX16, 55ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 Dual-Port SRAM, 8KX16, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 8KX16, 17ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Multi-Port SRAM, 8KX16, 20ns, CMOS, PQFP100 Dual-Port SRAM, 8KX16, 55ns, CMOS, PQFP100, TQFP-100 Application Specific SRAM, 8KX16, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Reach Compliance Code not_compliant not_compliant unknown not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 55 ns 20 ns 17 ns 20 ns 55 ns 55 ns
JESD-30 代码 S-PQCC-J84 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100
内存密度 131072 bit 131072 bit 131072 bit 131072 bit 131072 bit 131072 bit
内存集成电路类型 APPLICATION SPECIFIC SRAM DUAL-PORT SRAM DUAL-PORT SRAM MULTI-PORT SRAM DUAL-PORT SRAM APPLICATION SPECIFIC SRAM
内存宽度 16 16 16 16 16 16
端子数量 84 100 100 100 100 100
字数 8192 words 8192 words 8192 words 8192 words 8192 words 8192 words
字数代码 8000 8000 8000 8000 8000 8000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
组织 8KX16 8KX16 8KX16 8KX16 8KX16 8KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ LFQFP LFQFP QFP LFQFP QFP
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK FLATPACK, LOW PROFILE, FINE PITCH FLATPACK
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 J BEND GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD
是否无铅 含铅 含铅 - - 含铅 含铅
是否Rohs认证 不符合 不符合 - 不符合 不符合 不符合
包装说明 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 TQFP-100 LFQFP, - TQFP-100 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
I/O 类型 COMMON COMMON - COMMON COMMON COMMON
JESD-609代码 e0 e0 - e0 e0 e0
湿度敏感等级 1 3 - 3 3 3
功能数量 1 1 1 - 1 1
端口数量 2 2 - 2 2 2
输出特性 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE
封装等效代码 LDCC84,1.2SQ QFP100,.63SQ,20 - QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20
峰值回流温度(摄氏度) 225 240 - - 240 240
电源 5 V 5 V - 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
最大待机电流 0.004 A 0.03 A - 0.004 A 0.03 A 0.004 A
最小待机电流 2 V 4.5 V - 2 V 4.5 V 2 V
最大压摆率 0.25 mA 0.37 mA - 0.37 mA 0.3 mA 0.25 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
处于峰值回流温度下的最长时间 30 20 - - 20 20
Base Number Matches - 1 1 1 1 -

 
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