LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 0.56 A, Single, N−Channel, Gate
ESD Protection, SOT-23
LNTR4003NLT1G
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Features
Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design
Low Gate Charge for Fast Switching
ESD Protected Gate
Minimum Breakdown Voltage Rating of 30 V
We declare that the material of product is ROHS compliant
and halogen free.
Level Shifters
Level Switches
Low Side Load Switches
Portable Applications
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
0.5
0.37
0.69
0.56
0.40
P
D
I
DM
T
J
,
Tstg
I
S
T
L
0.83
1.7
−55 to
150
1.0
260
W
A
°C
A
°C
W
A
Unit
V
V
A
3
1
2
SOT-23
Applications
Drain
3
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Gate 1
2
Source
Steady State
t < 10 s
T
A
= 25°C
T
A
= 85°C
t<5s
t
p
= 10
ms
MARKING DIAGRAM
3
Drain
M
2
Source
Shipping
3000/Tape & Reel
10,000/Tape & Reel
Rev .O 1/5
TR8
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1
Gate
TR8
M
= Specific Device Code
= Month Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
SOT−23
SOT−23
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJA
R
qJA
R
qJA
Max
180
150
300
Unit
°C/W
LNTR4003NT1G
LNTR4003NT3G
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
Drain−to−Source On Resistance
R
DS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 mA
T
J
= 25°C
T
J
= 125°C
0.65
0.45
14
ns
0.7
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DD
= 5.0 V,
I
D
= 0.1 A, R
G
= 50
W
16.7
47.9
65.1
64.2
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 5.0 V, V
DS
= 24 V,
I
D
= 0.1 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 5.0 V
21
19.7
8.1
1.15
0.15
0.32
0.23
nC
pF
g
FS
V
GS(TH)
V
GS(TH)
/T
J
V
GS
= 4.0 V, I
D
= 10 mA
V
GS
= 2.5 V, I
D
= 10 mA
V
DS
= 3.0 V, I
D
= 10 mA
V
GS
= V
DS
, I
D
= 250
mA
0.8
3.4
1.0
1.5
0.33
1.5
2.0
1.6
V
mV/°C
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 30 V
T
J
= 25°C
V
GS
= 0 V, I
D
= 100
mA
30
40
1.0
±1.0
V
mV/°C
mA
mA
Symbol
Test Condition
Min
Typ
Max
Units
V
DS
= 0 V, V
GS
=
±10
V
W
S
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 8A/ms,
I
S
= 10 mA
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.6
V
GS
= 10 V to 5 V
I
D,
DRAIN CURRENT (A)
I
D,
DRAIN CURRENT (A)
4.5 V
1.2
1.2
1.6
V
DS
≥
10 V
T
J
= −55°C
0.8
4V
0.8
T
J
= 25°C
T
J
= 125°C
0.4
3.5 V
2.5 V
0.4
0
0
1
0
2
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3
4
2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
5
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
10
I
D
= 0.2 A
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1
Figure 2. Transfer Characteristics
V
GS
= 10 V
0.8
T
J
= 125°C
8
6
0.6
T
J
= 25°C
4
0.4
2
0
2.4
0.2
0
0
0.1
0.2
T
J
= −55°C
2.8
3.2
3.6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
4
0.3
0.4
0.5
0.6
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
(NORMALIZED)
1.80
1.60
1.40
1.20
1.00
0.80
0.60
−25
I
D
= 0.3 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Temperature
1000
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
10
−50
0
25
50
75
100
125
150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
T
J
= 25°C
V
GS
= 0 V
C, CAPACITANCE (pF)
40
V
GS,
GATE−TO−SOURCE VOLTAGE (V)
50
5
T
J
= 25°C
I
D
= 0.1 A
4
30
C
iss
C
oss
10
C
rss
3
20
2
1
0
0
0.4
0.8
1.2
Q
G
, TOTAL GATE CHARGE (nC)
0
0
4
8
12
16
20
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
1
I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
0.1
0.01
T
J
= 150°C
T
J
= 25°C
0.001
0.4
0.6
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.8
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LNTR4003NLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
C
D
H
K
J
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 5/5
stm32/stm8
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