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709089S6PF

产品描述Dual-Port SRAM, 64KX8, 6ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100
产品类别存储    存储   
文件大小181KB,共18页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

709089S6PF概述

Dual-Port SRAM, 64KX8, 6ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100

709089S6PF规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明14 X 14 MM, 1.4 MM HEIGHT, TQFP-100
针数100
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.B
最长访问时间6 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)100 MHz
I/O 类型COMMON
JESD-30 代码S-PQFP-F100
JESD-609代码e0
长度14 mm
内存密度524288 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度8
湿度敏感等级3
功能数量1
端口数量2
端子数量100
字数65536 words
字数代码64000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织64KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码QFF
封装等效代码QFP100,.63SQ,20
封装形状SQUARE
封装形式FLATPACK
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源5 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.015 A
最小待机电流4.5 V
最大压摆率0.585 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式FLAT
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度14 mm

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HIGH-SPEED 64/32K x 8
SYNCHRONOUS
DUAL-PORT STATIC RAM
Features:
IDT709089/79S/L
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 6/7/9/12/15ns (max.)
– Industrial: 12ns (max.)
Low-power operation
– IDT709089/79S
Active: 950mW (typ.)
Standby: 5mW (typ.)
– IDT709089/79L
Active: 950mW (typ.)
Standby: 1mW (typ.)
Flow-Through or Pipelined output mode on either port via
the
FT/PIPE
pin
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 4ns setup to clock and 1ns hold on all control, data,
and address inputs
– Data input, address, and control registers
– Fast 6.5ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 10ns cycle time, 100MHz operation in the Pipelined
output mode
TTL- compatible, single 5V (±10%) power supply
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Available in 100-pin Thin Quad Flatpack (TQFP) package
Functional Block Diagram
R/W
L
OE
L
CE
0L
CE
1L
R/W
R
OE
R
CE
0R
CE
1R
1
0
0/1
1
0
0/1
FT/PIPE
L
0/1
1
0
0
1
0/1
FT/PIPE
R
I/O
0L
- I/O
7L
I/O
Control
I/O
Control
I/O
0R
- I/O
7R
A
15L
(1)
A
0L
CLK
L
ADS
L
CNTEN
L
CNTRST
L
Counter/
Address
Reg.
MEMORY
ARRAY
Counter/
Address
Reg.
A
15R
(1)
A
0R
CLK
R
ADS
R
CNTEN
R
CNTRST
R
3242 drw 01
.
NOTE:
1. A
15
X
is a NC for IDT709079.
JANUARY 2009
1
©2009 Integrated Device Technology, Inc.
DSC-3242/13

709089S6PF相似产品对比

709089S6PF 709079S6PF 709079L7PF 709089S7PF 709089S12PFI 709089L7PF 709089L6PF 709079S7PF 709079L6PF
描述 Dual-Port SRAM, 64KX8, 6ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 32KX8, 6ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 32KX8, 7ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 7ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 12ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 7ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 6ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 32KX8, 7ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 Dual-Port SRAM, 32KX8, 6ns, CMOS, PQFP100, 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 QFP QFP QFP QFP QFP QFP QFP QFP QFP
包装说明 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 QFF, QFP100,.63SQ,20 QFF, QFP100,.63SQ,20 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 QFF, QFP100,.63SQ,20 14 X 14 MM, 1.4 MM HEIGHT, TQFP-100 QFF, QFP100,.63SQ,20 QFF, QFP100,.63SQ,20 QFF, QFP100,.63SQ,20
针数 100 100 100 100 100 100 100 100 100
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 3A991.B.2.B EAR99 EAR99 3A991.B.2.B 3A991 3A991.B.2.B 3A991.B.2.B EAR99 EAR99
厂商名称 IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology)
最长访问时间 6 ns - 7 ns 7 ns - 7 ns - 7 ns -
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE - FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE - FLOW-THROUGH OR PIPELINED ARCHITECTURE - FLOW-THROUGH OR PIPELINED ARCHITECTURE -
最大时钟频率 (fCLK) 100 MHz - 83 MHz 83 MHz - 83 MHz - 83 MHz -
I/O 类型 COMMON - COMMON COMMON - COMMON - COMMON -
JESD-30 代码 S-PQFP-F100 - S-PQFP-F100 S-PQFP-F100 - S-PQFP-F100 - S-PQFP-F100 -
JESD-609代码 e0 - e0 e0 - e0 - e0 -
长度 14 mm - 14 mm 14 mm - 14 mm - 14 mm -
内存密度 524288 bit - 262144 bit 524288 bit - 524288 bit - 262144 bit -
内存集成电路类型 DUAL-PORT SRAM - DUAL-PORT SRAM DUAL-PORT SRAM - DUAL-PORT SRAM - DUAL-PORT SRAM -
内存宽度 8 - 8 8 - 8 - 8 -
湿度敏感等级 3 - 3 3 - 3 - 3 -
功能数量 1 - 1 1 - 1 - 1 -
端口数量 2 - 2 2 - 2 - 2 -
端子数量 100 - 100 100 - 100 - 100 -
字数 65536 words - 32768 words 65536 words - 65536 words - 32768 words -
字数代码 64000 - 32000 64000 - 64000 - 32000 -
工作模式 SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS -
最高工作温度 70 °C - 70 °C 70 °C - 70 °C - 70 °C -
组织 64KX8 - 32KX8 64KX8 - 64KX8 - 32KX8 -
输出特性 3-STATE - 3-STATE 3-STATE - 3-STATE - 3-STATE -
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY -
封装代码 QFF - QFF QFF - QFF - QFF -
封装等效代码 QFP100,.63SQ,20 - QFP100,.63SQ,20 QFP100,.63SQ,20 - QFP100,.63SQ,20 - QFP100,.63SQ,20 -
封装形状 SQUARE - SQUARE SQUARE - SQUARE - SQUARE -
封装形式 FLATPACK - FLATPACK FLATPACK - FLATPACK - FLATPACK -
并行/串行 PARALLEL - PARALLEL PARALLEL - PARALLEL - PARALLEL -
峰值回流温度(摄氏度) 240 - 240 240 - 240 - 240 -
电源 5 V - 5 V 5 V - 5 V - 5 V -
认证状态 Not Qualified - Not Qualified Not Qualified - Not Qualified - Not Qualified -
座面最大高度 1.6 mm - 1.6 mm 1.6 mm - 1.6 mm - 1.6 mm -
最大待机电流 0.015 A - 0.005 A 0.015 A - 0.005 A - 0.015 A -
最小待机电流 4.5 V - 4.5 V 4.5 V - 4.5 V - 4.5 V -
最大压摆率 0.585 mA - 0.44 mA 0.49 mA - 0.44 mA - 0.49 mA -
最大供电电压 (Vsup) 5.5 V - 5.5 V 5.5 V - 5.5 V - 5.5 V -
最小供电电压 (Vsup) 4.5 V - 4.5 V 4.5 V - 4.5 V - 4.5 V -
标称供电电压 (Vsup) 5 V - 5 V 5 V - 5 V - 5 V -
表面贴装 YES - YES YES - YES - YES -
技术 CMOS - CMOS CMOS - CMOS - CMOS -
温度等级 COMMERCIAL - COMMERCIAL COMMERCIAL - COMMERCIAL - COMMERCIAL -
端子面层 Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15) -
端子形式 FLAT - FLAT FLAT - FLAT - FLAT -
端子节距 0.5 mm - 0.5 mm 0.5 mm - 0.5 mm - 0.5 mm -
端子位置 QUAD - QUAD QUAD - QUAD - QUAD -
处于峰值回流温度下的最长时间 20 - 20 20 - 20 - 20 -
宽度 14 mm - 14 mm 14 mm - 14 mm - 14 mm -
Base Number Matches - 1 1 1 1 1 1 - -

 
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