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MJE16002AJ

产品描述TRANSISTOR 5 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
产品类别分立半导体    晶体管   
文件大小502KB,共65页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJE16002AJ概述

TRANSISTOR 5 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

MJE16002AJ规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码TO-220AB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)5 A
集电极-发射极最大电压450 V
配置SINGLE
最小直流电流增益 (hFE)5
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed switching of inductive
circuits where fall time and RBSOA are critical. They are particularly well–suited for
line–operated switchmode applications.
The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for
applications where drive current is limited.
Typical Applications:
Switching Regulators
High Resolution Deflection Circuits
Inverters
Motor Drives
Fast Switching Speeds
50 ns Inductive Fall Time @ 75
_
C (Typ)
70 ns Crossover Time @ 75
_
C (Typ)
100
_
C Performance Specified for:
Reverse–Biased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents
Designer's
Data Sheet
MJE16002*
MJE16004*
*Motorola Preferred Device
5.0 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
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MAXIMUM RATINGS
Rating
Symbol
Value
450
850
6.0
5.0
10
4.0
8.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
Total Power Dissipation @ TC = 25
_
C
@ TC = 100
_
C
Derate above TC = 25
_
C
80
32
0.64
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
TL
Max
Unit
Thermal Resistance, Junction to Case
1.56
275
_
C/W
_
C
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
3–688
Motorola Bipolar Power Transistor Device Data
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