BT151S series L and R
Thyristors
Rev. 05 — 9 October 2006
Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT428 plastic package.
1.2 Features
I
High thermal cycling performance
I
High bidirectional blocking voltage
capability
I
Surface-mounted package
1.3 Applications
I
Motor control
I
Ignition circuits
I
Static switching
I
Protection circuits
1.4 Quick reference data
I
I
I
I
I
I
V
DRM
≤
500 V (BT151S-500L/R)
V
RRM
≤
500 V (BT151S-500L/R)
V
DRM
≤
650 V (BT151S-650L/R)
V
RRM
≤
650 V (BT151S-650L/R)
V
DRM
≤
800 V (BT151S-800R)
V
RRM
≤
800 V (BT151S-800R)
I
I
I
I
I
I
TSM
≤
120 A (t = 10 ms)
I
T(RMS)
≤
12 A
I
T(AV)
≤
7.5 A
I
GT
≤
5 mA (BT151S series L)
I
GT
≤
15 mA (BT151S series R)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
cathode (K)
anode (A)
gate (G)
mounting base; connected to anode
2
1
3
mb
A
G
sym037
Simplified outline
Symbol
K
SOT428 (DPAK)
NXP Semiconductors
BT151S series L and R
Thyristors
3. Ordering information
Table 2.
Ordering information
Package
Name
BT151S-500L
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
DPAK
Description
Version
plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
Conditions
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
V
RRM
repetitive peak reverse voltage
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
I
T(AV)
I
T(RMS)
I
TSM
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
mb
≤
103
°C;
see
Figure 1
all conduction angles; see
Figure 4
and
5
half sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 10 ms
t = 8.3 ms
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
Max
500
650
800
500
650
800
7.5
12
Unit
V
V
V
V
V
V
A
A
-
-
-
-
-
-
-
120
132
72
50
2
5
5
0.5
+150
125
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/µs.
BT151S_SER_L_R_5
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
2 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
15
P
tot
(W)
2.2
10
2.8
4
conduction
angle
(degrees)
30
60
90
120
180
0
0
2
4
6
I
T(AV) (A)
form
factor
a
4
2.8
2.2
1.9
1.57
001aab019
98
T
mb(max)
(°C)
107
a=
1.57
1.9
5
116
α
125
8
Form factor a = I
T(RMS)
/I
T(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
160
I
TSM
(A)
120
t
t
p
T
j
initial = 25
°C
max
I
T
001aaa957
I
TSM
80
40
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151S_SER_L_R_5
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
3 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
10
3
001aaa956
I
TSM
(A)
dl
T
/dt limit
10
2
I
T
I
TSM
t
t
p
T
j
initial = 25
°C
max
10
10
−5
10
−4
10
−3
t
p
(s)
10
−2
t
p
≤
10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aaa954
25
I
T(RMS)
(A)
20
16
I
T(RMS)
(A)
12
001aaa998
15
8
10
4
5
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
≤
103
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BT151S_SER_L_R_5
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
4 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 6
mounted on an FR4
printed-circuit board; see
Figure 14
Min
-
-
Typ
-
75
Max
1.8
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
001aaa963
1
10
−1
P
δ
=
t
p
T
10
−2
t
p
T
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT151S_SER_L_R_5
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
5 of 13
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